2N4898

Abstract: 2N4899 2N4900 ib10s
Contextual Info: 2N4898, 2N4899, 2N4900 PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( l c = 100mA, lB = 0 ) Collector Cutoff Current ( VCE = 20 V, lB = 0 )

2N6121

Abstract: 2N6122 2N6124
Contextual Info: TRANSISTORS—POWER PNP TO—66 PACKAGE V CEO !C VOLTS AMPS TYPE h FE @ h FE V CE sat 'c VOLTS AMP MAX PD fT lc T c =25°C MHz NPN AMP w MIN COMPLEMENT @ MIN MAX MIN-MAX 2N4898 40 1 20 - 100 @ .50 0.6 @ 1.0 25 3 2N4910 2N4899 50 1 2 0 - 100 @ .50 0.6 @ 1.0

2N4898X

Abstract: 2N4899X 2N4900X
Contextual Info: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962)

b0416

Abstract: TO-202AC
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A

Contextual Info: 2N4899 Medium-power PNP Silicon Power Transistor. 4 A - 60 V - 25 W. 1 of 1 Home Part Number: 2N4899 Online Store 2N4899 Diodes M edium - po w er PNP Silic o n Po w er Trans is t o r. 4 A - 6 0 V - 2 5

8130A

Abstract: 2N4891 2N4900 2N4898 TO-213AA Package 2N4899 s2c-s 1B transistors clare mercury relay RCA-2N4898
Contextual Info: UT 3875081 G E SOLID STATE "D È ~ ÏH ô 7 5 0 a i 0 1E 17377 0017377 D ! '3 3 7 ~ General-Purpose Power Transistors File N u m b e r 1150 Silicon P-N-P * Medium-Power Transistors 2N4898, 2N4899, 2N4900 T ER M IN A L D ESIG N A T IO N S General-Purpose Types for Sw itching A pplications

2N62U

Contextual Info: 8 E ì I m J E L E C T R O N IC S , INC. COLLECTOR CURRENT = D evice No 2N3660 2N3661 2N3740 2N374I 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680 2N62U 2N6212

Contextual Info: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049

0340 TRANSISTOR PNP

Contextual Info: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962)

2NS344

Contextual Info: COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No SECTION 2 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2NS344 2N5345 2N5679 2N5680 2N6211 2N6212 2N6213 2N6214

2N3904DCSM

Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
Contextual Info: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

Contextual Info: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680

2N4898X

Abstract: 2N4899X 2N4900X transistor applications
Contextual Info: 2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm inches PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. PostScript Picture c:\approved\packages\metal\to 66.eps

Contextual Info: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4

2N4898

Abstract: 2N4900 2N4899 2N4912
Contextual Info: SavantIC Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching

2n5430

Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
Contextual Info: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V

TO111 package

Abstract: 2N3774 2N3660 2N3661 2N3740 2N3741 2N3775 2N3776 2N3777 2N3778
Contextual Info: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680

2N3660

Abstract: 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779
Contextual Info: y. 8 E u M Ê E L E C T R O N IC S , INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No Case VCBO Volts 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344

TO-213AA Package

Abstract: ZI-49 2N4900 2n4899
Contextual Info: . Power Transistors File Num ber 1150 HARRI S S E M I C O N D 2N4898, 2N4899, 2N4900 S E CT OR S7E D 4302271 D0L18H3 7 « H A S :T -3 3 - Silicon P-N-P Medium-Power Transistors I TERMINAL DESIGNATIONS G eneral-Purpose Types for Switching Applications Faatur«*:

2N4900

Abstract: 2N4898 2N4899 2N4912
Contextual Info: Inchange Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors DESCRIPTION ・・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area ・2N4900 complement to type 2N4912 APPLICATIONS ・Designed for driver circuits,switching

2N4899

Abstract: 2n4900 2N4898 2N4912
Contextual Info: Product Specification www.jmnic.com 2N4898 2N4899 2N4900 Silicon PNP Power Transistors DESCRIPTION ・・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・2N4900 complement to type 2N4912 APPLICATIONS ・Designed for driver circuits,switching

2N3775

Abstract: 2N3777 2N3774 2N3778 to-5 2N3779 2N3780 DATASHEET 2N3777 2N3776 2N3781
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N4234 2N4235 2N4236 2N4898 2N4899 2N4900 2N5415 2N5416 2N3660 2N3661 40 60 80 100 40 60 80 100 40 60 80 40 60 80 200 300 30 50 20/60 20/60 20/60 20/60 10/40

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428