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    2N5021 Search Results

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    2N5021 Price and Stock

    InterFET Corporation 2N5021

    JFET JFET P-Channel 25V Low Ciss
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5021
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    • 1000 $9.06
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    New Jersey Semiconductor Products, Inc. 2N5021

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N5021 1,108 1
    • 1 $6.5408
    • 10 $4.2515
    • 100 $2.8341
    • 1000 $2.6817
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    New Jersey Semiconductor Products Inc 2N5021

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, P-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5021 886
    • 1 $8.76
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    • 1000 $3.066
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    2N5021 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5021 InterFET P-Channel silicon junction field-effect transistor Original PDF
    2N5021 InterFET P-Channel Silicon Junction Field-Effect Transistor Original PDF
    2N5021 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N5021 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5021 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5021 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5021 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5021 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5021 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5021 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5021 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5021 National Semiconductor Amplifiers Scan PDF
    2N5021 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N5021 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N5021 Solitron Devices Low Power FET, RF Amplifiers, P-Channel FETS Scan PDF

    2N5021 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5021

    Abstract: 2N5020 SMP5020 SMP5021 transistor 2n5020
    Text: Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


    Original
    2N5020, 2N5021 2N5020 SMP5020, SMP5021 2N5021 2N5020 SMP5020 SMP5021 transistor 2n5020 PDF

    2n5268

    Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
    Text: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72


    Original
    2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2n5268 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266 PDF

    J177. P-CHANNEL. TO-92

    Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
    Text: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature


    Original
    2N4391, 2N4392, 2N4393 2N4391 2N4392 O-226AB O-92/18) J177. P-CHANNEL. TO-92 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391 PDF

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116 PDF

    2N3823 equivalent

    Abstract: transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823
    Text: Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA


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    2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A 2N3823 equivalent transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823 PDF

    2SJ72BL

    Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
    Text: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m


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    2N2500 2N3332 2N2498 2N3330 2N4089 UCS51 SMP3331 TMPF3331 TP3331 TMPF3820 2SJ72BL PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D PDF

    2N5021

    Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
    Text: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S


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    2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 2N2500 2N5021 2N5265 2N5266 2n5268 2N5460 2n5462 2N2609 PDF

    2n5020

    Abstract: No abstract text available
    Text: B 18 9 -9 7 2N5020, 2N5021 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maxim um ratings a t T * = 25°C • Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


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    2N5020, 2N5021 2N5Q20 2N5Q21 T0-18 SMP5020, SMP5021 2n5020 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    G50433

    Abstract: No abstract text available
    Text: ALL E GR O MICROSYSTEMS INC 8 5 1 4 0 1 9 S P RA GU E. =13 ]> • G50433Û G G D 3 b l 7 1 ■ AL6R S E M I C O N D S / ICS 93D 03617 D T - zj? - z » s METAL-CASE JUNCTION FIELD-EFFECT TRA N SIST O R S P-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


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    G50433Ã 2N2386 2N2497 2N2498 2N2499 2N2500 2N2608 2N2609 2N3329 2N3330 G50433 PDF

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297 PDF

    UC451

    Abstract: No abstract text available
    Text: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20


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    2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 UC451 PDF

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: S P R A G U E / S E MI C Ô ND 8 5 1 4 0 1 9 SPR A G U E. GROUP =13 D • ÔS1 3ÔS G SEM IC O N D S/IC S DDQ3 L 17 T 93D 0 3 6 1 7 J ■ 7 I . ? 9 , 7 C METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS_ P-Channel JFETs General-Purpose Device Types


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    2N2386 2N2497 2N2498 2N2499 2N2500 2N2608 2N2609 2N3329 2N3330 2N3331 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


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    20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent PDF

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


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    MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451 PDF

    2N3993A

    Abstract: FP22 to92 2N5265
    Text: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I


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    2N2500 2N3332 2N3993A FP22 to92 2N5265 PDF

    Untitled

    Abstract: No abstract text available
    Text: IN TE R 2 bE F E T CORP d • 4ö2baaa ooooiaa A2 T - 9 / - 6 Ô P-Channel JFETs |S | General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C VgSio»! Mm <>>ic V Max (nA) (V) 2N 2386 20 10 10 10 2N 2497 20 10 10 10 20 10 loss Mm imA| (VI (V)


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    2N3993 2N3994 PDF