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    2N5306 Price and Stock

    Central Semiconductor Corp 2N5306 TIN/LEAD

    TRANS NPN DARL 25V 0.3A TO92-3
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    DigiKey 2N5306 TIN/LEAD Bulk 3,454 1
    • 1 $1.14
    • 10 $0.717
    • 100 $0.4711
    • 1000 $0.33105
    • 10000 $0.29403
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    Avnet Americas 2N5306 TIN/LEAD Box 5,000
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    • 10000 $0.27647
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    Mouser Electronics 2N5306 TIN/LEAD
    • 1 $0.93
    • 10 $0.677
    • 100 $0.458
    • 1000 $0.306
    • 10000 $0.305
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    onsemi 2N5306

    TRANS NPN DARL 25V 1.2A TO92-3
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    Central Semiconductor Corp 2N5306 PBFREE

    TRANS NPN DARL 25V 0.3A TO-92
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    DigiKey 2N5306 PBFREE Bulk 2,500
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    • 10000 $0.25648
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    Avnet Americas 2N5306 PBFREE Box 5,000
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    • 10000 $0.25304
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    Mouser Electronics 2N5306 PBFREE 3,374
    • 1 $0.68
    • 10 $0.594
    • 100 $0.405
    • 1000 $0.288
    • 10000 $0.243
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    Central Semiconductor Corp 2N5306

    Trans Darlington NPN 25V 300mA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N5306)
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    Avnet Americas 2N5306 Box 6 Weeks 2,500
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    Central Semiconductor Corp 2N5306 APM TIN/LEAD

    Transistor Darlington NPN 25V 300mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N5306 APM TIN/LEA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5306 APM TIN/LEAD Ammo Pack 4,000
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    Mouser Electronics 2N5306 APM TIN/LEAD
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    Find more 2N5306 price and stock on Findchips.com

    2N5306 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5306 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5306 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N5306 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin Scan PDF
    2N5306 Central Semiconductor Darlington Bipolar Transistor, NPN, 25V, TO-92, 3-Pin Scan PDF
    2N5306 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N5306 Fairchild Semiconductor NPN Darlington Transistor Scan PDF
    2N5306 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5306 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5306 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan PDF
    2N5306 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5306 Micro Electronics Semiconductor Devices Scan PDF
    2N5306 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5306 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5306 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5306 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5306 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5306 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5306 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5306 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5306 National Semiconductor NPN Transistors / DARLINGTON Scan PDF

    2N5306 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


    Original     		PDF 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64

    2N5306 equivalent

    Abstract: 2N5306 MPSA14
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 equivalent 2N5306

    Untitled

    Abstract: No abstract text available
    Text: 2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14

    2n5306

    Abstract: No abstract text available
    Text: 2N5306 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5306 Availability Online Store


    Original     		PDF 2N5306 2N5306 STV3208 LM3909N

    2N5306

    Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR MPSA14
    Text: 2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted


    Original     		PDF 2N5306 MPSA14 2N5306 2N5306 FAIRCHILD SEMICONDUCTOR

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


    OCR Scan     		PDF D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A

    2N5306

    Abstract: MPSA14
    Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5306 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS


    OCR Scan     		PDF 2N5306 MPSA14 2N5306

    quan-tech

    Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220

    2N5306

    Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR
    Text: SEMICONDUCTOR ¡m 2N5306 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


    OCR Scan     		PDF 2N5306 PSA14 2N5306 2N5306 FAIRCHILD SEMICONDUCTOR

    2n5306

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • 2N5306 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted


    OCR Scan     		PDF 2N5306 MPSA14 2n5306

    MPSA14 MPSA64

    Abstract: GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE - 6 5 ° t o + 1 5 0 ° C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		PDF 2N5305 2N5306 2N5306A 2N5307 2N5308A GES5305 S5306 GES5306A To-126 0000S23 MPSA14 MPSA64 GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307

    D39C4

    Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 GES6220

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5365 2N5305 2N5306 "to-98" package

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308

    mhb 7001

    Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220