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    2N5397 Search Results

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    2N5397 Price and Stock

    InterFET Corporation 2N5397

    JFETs JFET N-Channel -25V Low Ciss
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N5397 137
    • 1 $10.75
    • 10 $9.47
    • 100 $8.19
    • 1000 $6.8
    • 10000 $6.8
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    Calogic Inc 2N5397

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics 2N5397 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.52
    • 10000 $7.52
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    Signetics 2N5397

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N5397 3 1
    • 1 $8.96
    • 10 $8.96
    • 100 $8.96
    • 1000 $8.96
    • 10000 $8.96
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    Quest Components 2N5397 2
    • 1 $12
    • 10 $8
    • 100 $8
    • 1000 $8
    • 10000 $8
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    Vishay Siliconix 2N5397

    JFET Transistor, N-Channel, TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5397 4
    • 1 $7.5
    • 10 $5
    • 100 $5
    • 1000 $5
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    Teledyne Defense Electronics 2N5397

    JFET Transistor, N-Channel, TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5397 1
    • 1 $7.5
    • 10 $5
    • 100 $5
    • 1000 $5
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    2N5397 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5397 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N5397 InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF
    2N5397 Calogic N-Channel JFET High Frequency Amplifier Scan PDF
    2N5397 Intersil N-channel JFET. High frequency amplifier. Scan PDF
    2N5397 Intersil Shortform Data Book 1983/4 Short Form PDF
    2N5397 Intersil Data Book 1981 Scan PDF
    2N5397 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5397 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5397 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5397 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5397 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5397 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5397 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5397 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5397 National Semiconductor JFET RF, VHF, UHF Amplifiers Scan PDF
    2N5397 National Semiconductor RF, VHF, UHF Amplifiers Scan PDF
    2N5397 National Semiconductor N-Channel JFETs Scan PDF
    2N5397 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N5397 Solitron Devices Low Power FET, RF Amplifiers, N-Channel FETS Scan PDF
    2N5397CHP Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2N5397 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5397

    Abstract: SMP5398 2N5398 SMP5397 1na30
    Text: Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage


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    PDF 2N5397, 2N5398 2N5397 SMP5397, SMP5398 2N5397 SMP5398 2N5398 SMP5397 1na30

    2N5397

    Abstract: No abstract text available
    Text: 2N5397 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5397 Availability Online Store


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    PDF 2N5397 2N5397 STV3208 LM3909N

    2N3819 equivalent

    Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
    Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30


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    PDF 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078 2N5103 2N3819 equivalent UC734 2N5668 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


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    PDF 2N5432 2N5433 2N5434 2N3686 2N3822 2N4118A 2N4416A 2N3684 2N5197 2N6485

    Digital Oscilloscope Preamp

    Abstract: L6518S interfet L6518SQ LMH6518 LMH6518SQ LMH6518SQE LMH6518SQX SQA16A InterFET Corporation
    Text: LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier General Description Features The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16 dB to 38.8 dB for a 40 dB range in 2 dB steps. The −3 dB bandwidth is 900 MHz


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    PDF LMH6518 LMH6518 Digital Oscilloscope Preamp L6518S interfet L6518SQ LMH6518SQ LMH6518SQE LMH6518SQX SQA16A InterFET Corporation

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    Untitled

    Abstract: No abstract text available
    Text: LMH6518 www.ti.com SNOSB21C – MAY 2008 – REVISED JULY 2013 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Check for Samples: LMH6518 FEATURES DESCRIPTION • • • The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16


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    PDF LMH6518 SNOSB21C LMH6518

    2N5396

    Abstract: 2n5397
    Text: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage


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    PDF 2N5397, 2N5398 2N5397 000074G 2N5396 2n5397

    2N5397 Texas

    Abstract: No abstract text available
    Text: TYPE 2N5397 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 4 , A U G U S T 1971 FO R V H F A M P L IF IE R A N D M IX E R A P P L IC A T IO N S • High Power Gain . . . 15 dB Min at 450 MHz • Low Noise Figure . . . 3.5 dB Max at 450 MHz


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    PDF 2N5397 2N5397 Texas

    2N5397

    Abstract: 2NS397 2N5398
    Text: C A L OG I C 4ÖE CORP D 1Ô44322 G0 GG3 E 4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION V 2N5397 / 2N5398 calotfic • T-3>\-zS 2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Common Gate) at 450MHz


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    PDF 2N5397 2N5398 2N5397/2N5398 450MHz 2NS397 450MHz 2N5398

    2N5397

    Abstract: 2N5398 X2N5397 X2N5398
    Text: CALOGI C CORP 4ÖE D 1 ÔH4 3 S2 GGGG3E4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION ' * _ 2N5397 / 2N5398 /<m Ia#i^î/< C Q IO O IC • T-^2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Comm on Gate) at 450MHz


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    PDF H4352 GG00324 2N5397/2N5398 450MHz 10sec) 300mW 2NS397 2N5398 2N5397 2N5398 X2N5397 X2N5398

    2n4391, Voltage controlled

    Abstract: sw 2n4093 2N5906
    Text: -Ælitran Devices. Inc. knot? ¥ ©[i[L[i©¥ tFcnr© ^©[D yj(gir ©attæmkqx IN TRO D U CTIO N TO TH E F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is d esirable to have a high O N -O FF-ratio. It is also desirable to b e ab le to switch both


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    PDF SDF1001 2N4391 2N4393 2N4861 2N5S92 2N4119 2N5906 2NS432 2N5433 2NS397-2N 2n4391, Voltage controlled sw 2n4093

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


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    PDF 2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan

    2n5105

    Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
    Text: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105


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    PDF 2N3819 2N3821* 2N3822Â 2N3823Â 2N4223 2N4224 2N4416 2N4416A 2N5078 2n5105 2N5245 2N5485 2N5670 pin 2N3821 2N3822 2N3823

    Untitled

    Abstract: No abstract text available
    Text: N-CH ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021“ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon prelonn 98/2%.


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    PDF 533mm) 0254mm) flb02 D0D41G3

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


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    PDF 2N4393 2N4856 2N4856A 2N4857 2N3824

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    2N5911

    Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
    Text: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 533mm) 0254mm) 2N5911 Junction-FET 2N5397 2N5398 2N5912 U257 FS3D

    2N3684

    Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
    Text: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0


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    PDF T0Stifl73 00S740 2N3684 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device


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    PDF SGM33Ã D003bl5 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N5397

    Abstract: 2N5398
    Text: E SOLI » □1 S T AT E D Ey3fl75aa]i cm:Lcm3 5 | 01E 3875081 G E SOLID STATE 10993 T - J / - * 2-T D N-Channel JF E T High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • G ps= 15dB Minimum Com mon Gate at 450MHz • L ow N oise • L ow Capacitance


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    PDF 3fl75Dfll 2N5397, 2N5398 450MHz 10sec) 300mW 2N5397 2N5398