Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5401S Search Results

    SF Impression Pixel

    2N5401S Price and Stock

    onsemi 2N5401_S00Z

    TRANS PNP 150V 0.6A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5401_S00Z Bulk 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.07931
    		Buy Now

    Diotec Semiconductor AG 2N5401

    Bipolar Transistor - TO-92 - 150V - 600mA - PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401 23,210
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0198
    		Buy Now

    Taitron Components Inc 2N5401

    PNP High Voltage Transistor - 150V - hFE=60-240/10mA - Vse(sat)<=0.5V/50mA - fT>=100MHz in TO-92 PKG.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401 8,946
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.0468
    • 10000 $0.0401
    		Buy Now

    Rectron Semiconductor 2N5401

    Transistor, Power Rating - 0.625W, Polarity - PNP, DC Collector/Base Gain hfe Min - 60, DC Current Gain hFE Max - 300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.0577
    • 10000 $0.0435
    		Buy Now

    Rectron Semiconductor 2N5401-F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5401-F
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0475
    		Buy Now
    Find more 2N5401S price and stock on Findchips.com

    2N5401S Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5401S Korea Electronics TRANS GP BJT PNP 150V 0.6A 3SOT-23 Original PDF
    2N5401S Korea Electronics High Voltage Transistor Scan PDF
    2N5401S Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    2N5401_S00Z Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 160V 600MA TO-92 Original PDF
    2N5401SAM Continental Device India 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Original PDF

    2N5401S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5401S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=-50nA Max. @VCB=-120V


    Original     		PDF 2N5401S -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 12. 22 Revision No : 2 1/2


    Original     		PDF 2N5401S

    2N5401S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 H A 3 G : VCBO=-160V, VCEO=-150V ・Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V


    Original     		PDF 2N5401S -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401S

    2N5401S SOT-23

    Abstract: 2N5401S
    Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-160V, VCEO=-150V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=-50nA Max. @VCB=-120V


    Original     		PDF 2N5401S -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401S SOT-23 2N5401S

    2N5401S SOT-23

    Abstract: zE sot23 SOT-23 Mark ZE MARKING ZE SOT-23 2N5401S
    Text: SEMICONDUCTOR 2N5401S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZE 1 2 Item Marking Description Device Mark ZE 2N5401S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF 2N5401S OT-23 2N5401S SOT-23 zE sot23 SOT-23 Mark ZE MARKING ZE SOT-23 2N5401S

    2N5401UB06

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5401HR 2N5401HR 2N5401UB06

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2N5401HR

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet — production data Features 3 BVCEO 150 V IC max 0.5 A 1 1 2 2 3 HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5401HR 2N5401HR

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    2N5401S

    Abstract: No abstract text available
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM A B C D E G H J K L M N P • High Collector Breakdwon Voltage : V Cbo=-160V, V Ceo=-150V


    OCR Scan     		PDF 2N5401S -160V, -50nA -120V -50mA, -10j/A, -10mA -50mA -10mA, 2N5401S