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    Central Semiconductor Corp 2N6028-PBFREE

    PROGRAMMABLE UJT 40V TO226-3
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    DigiKey 2N6028-PBFREE Bulk 1,715 1
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    Central Semiconductor Corp 2N6027-PBFREE

    PROGRAMMABLE UJT 40V TO226-3
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    DigiKey 2N6027-PBFREE Bulk 1,530 1
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    • 100 $1.7425
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    onsemi 2N6028G

    PROGRAMMABLE UJT 40V TO92
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    EBV Elektronik 2N6028G 143 Weeks 5,000
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    onsemi 2N6027G

    TRANS PROG UNIJUNCT 40V TO92
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    Win Source Electronics 2N6027G 60,000
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    onsemi 2N6028RLRA

    PROGRAMMABLE UJT 40V TO92
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    2N602 Datasheets (163)

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    2N602 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N602 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N602 Unknown GE Transistor Specifications Scan PDF
    2N602 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N602 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N602 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N602 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N602 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N602 Unknown Vintage Transistor Datasheets Scan PDF
    2N602 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6021 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6021 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6021 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6021 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6021 Unknown Transistor Replacements Scan PDF
    2N6021 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6021 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6021 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6021 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6021 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    ...

    2N602 Datasheets Context Search

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    2N6030

    Abstract: 2N6029 2N5629 2N5630
    Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications


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    2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630 PDF

    2N5629

    Abstract: 2N5630 2N6029 2N6030
    Text: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base


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    2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N6027-2N6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


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    2N6027-2N6028 MIL-PRF-19500, PDF

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two


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    2N6027, 2N6028 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527 PDF

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


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    MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 = 1 2 ^ 3 7 O D E U M S b • T ‘* 3 V l 5 2 N5629 « ! _ 2 N 6 0 2 9 SGS-THOMSON ê fô m iC T S G S-THOMSON 30E » COMPLEMENTARY HIGH POWER TRANSISTORS DESCRIPTIO N The 2N5629 NPN and 2N6029 (PNP) are comple­ mentary silicon epitaxial-base transistors in Jedec


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    N5629 2N5629 2N6029 29-2N6029 2N5629-2N6029 PDF

    sc 6038

    Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
    Text: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching


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    t3b75SM 2N602Ô 2N6034 2N6035 2N6036 2N6034, 2N6037 2N6035, 2N6038 2N6036, sc 6038 N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037 PDF

    2N6028 Application Note

    Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting


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    2N6027, 2N6028 10igure 2N6028 2N6028RLRA 2N6027RL1 2N6028 Application Note 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028 PDF

    2N6027

    Abstract: 2N6028 2N6028 Application Note unijunction application note 2n6027 gate current 20
    Text: 2N6027 2N6028 Program m able Unijunction Transistors Silicon Programmable Unijunction Transistors PUTs 40 VOLTS 300 mW . designed to enable the engineer to "p ro g ra m " unijunction characteristics such as Rbb- V> !V' and Ip bY merely selecting two resistor values. Application includes


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    2N6027 2N6028 2N6027 2N6028 2N6028 Application Note unijunction application note 2n6027 gate current 20 PDF

    2N6028

    Abstract: 2N6027 MOTOROLA 2n6027
    Text: 2N6027 2N6028 Programmable Unijunction Transistors Silico n Program m able Unijunction T ran sisto rs P U Ts 40 V O L TS 300 m W . . . d e sig n e d to enable the e n g ineer to "p ro g ra m " unijunction ch aracteristics such as R b B ’ V i IV ’ ar|d Ip by m e re ly selecting tw o re sisto r va lu e s. A p p licatio n includ es


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    2N6027 2N6028 2N6028 2N6027 MOTOROLA 2n6027 PDF

    2N6028

    Abstract: No abstract text available
    Text: 2N6028 Silicon programmable unijunction transistors PUT's in package TO-92 Pinouts: 1 - Cathode, 2 - Gate, 3 - Anode Ratings (TA = 25°C) Parameter, units Symbol V ak V gkf V qkr V gar It •trm Pt IG AO Ig ks VF Vo Vr lv tR Peak current, j.tA, VR=10V. Rr,=10kU


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    2N6028 50riiA 10ki2 2N6028 PDF

    IRF 548

    Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39


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    1N5333B 1N914 2N5886 30WQ04FN 1N5335B 1SMB15AT3 2N6027 30WQ06FN 1N5336B 2N6028 IRF 548 irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800 PDF

    2N6027

    Abstract: equivalent transistor of 2n6027 2N6028 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse


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    2N6027, 2N6028 2N6027 2N6028 2N6028RLRA equivalent transistor of 2n6027 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028 PDF

    2n5060 thyristor

    Abstract: Silicon Controlled Rectifiers C106X Triacs 2n5060 transistor 2N6344A 2N6027-2N6028 2N5060 SCR 2N5060 2N6027
    Text: THYRISTOR PART NUMBER PREFIX* DEVICE PREFIX DEVICE DESCRIPTION 2N5060 Series Silicon Controlled Rectifiers SCR 2N6027, 2N6028 Programmable Unijunction Transistor (PUT) 2N6071A Series 2N6344, 49 2N6344A, 48A, 49A Triacs 2N6394 Series 2N6400 Series 2N6504 Series


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    2N5060 2N6027, 2N6028 2N6071A 2N6344, 2N6344A, 2N6394 2N6400 2N6504 C106X 2n5060 thyristor Silicon Controlled Rectifiers C106X Triacs 2n5060 transistor 2N6344A 2N6027-2N6028 SCR 2N5060 2N6027 PDF

    2N5630

    Abstract: 2N5629 2N6029 2N6030
    Text: SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base


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    2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030 PDF

    Low-Power Germanium PNP

    Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67


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    2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ Low-Power Germanium PNP 2N218 ASZ20 2N295 Diode 13M 2N2374 CK66A 2N466 TO9 package PDF

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n6028 "Programmable Unijunction Transistor" 2N6028 CIRCUIT 2n5270 2N6027 CIRCUIT Programmable Unijunction Transistor 2N6028 Application Note
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse


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    2N6027, 2N6028 r14525 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n6028 "Programmable Unijunction Transistor" 2N6028 CIRCUIT 2n5270 2N6027 CIRCUIT Programmable Unijunction Transistor 2N6028 Application Note PDF

    2n6029

    Abstract: 2N5630
    Text: 2N5629 2N5630 2N6029 2N6030 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base


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    2N5629 2N5630 2N6029 2N6030 2N5629, 2N6029 2N6029) 2N5630, 2N6030) 500kHz 2N5630 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6024 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)36# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)3.6


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    2N6024 Freq800k PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N602A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC) I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.


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    2N602A Freq12M PDF

    BR101

    Abstract: bry39 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PNPN DEVICES OVERVIEW leaded surface-m ount TO -72 TO-92 SOT23 SOT143 BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 BRY62


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    BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 OT143 BRY62 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702 PDF

    transistor 123 DL

    Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
    Text: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current


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    2N6027 2N6028, GES6027, GES6028 2N6027, 2N6028 GES6028 92CS-4234Â transistor 123 DL equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT PDF

    2N5629 MOTOROLA

    Abstract: 2N5629 2n6029 2N6030 2N6031
    Text: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and


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    2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 2N6029, 2N6030, b3t72SM 2N5629 MOTOROLA 2N6031 PDF

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


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    PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437 PDF