2N6076 Search Results

2N6076

Contextual Info: FAIRCHILD D ISC R E TE POW ER & SIGNAL TECH N O LO G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV c e o hFE 25 V Min 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 3 1 B C E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature

Contextual Info: ^zml-Conductoi Lptoducti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DISCRETE POWER & SIGNAL TECHNOLOGIES f 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO 25 V (Mln) hFE . . . . 100 (Min) @ VCE - 10 V, Ic = 10 mA

k 3683 transistor

Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

Contextual Info: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER & SIGNAL TECHNOLOGIES tm 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR B V ceo . . . 25 V Min hFE . . . 100 (Min) @ V c e = 10 V, I c = 10 m A l 2 B C ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature

2N6076

Contextual Info: FAIRCHILD D IS C R E T E PO W ER & SIGNAL TEC H N O L O G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV ceo hFE . . . . 25 V Min . . . . 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 B C 31 E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEM PERATURES

2N6076

Abstract: 2n60
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

2N5172

Contextual Info: 2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications. MARKING: FULL PART NUMBER

hFE is transistor

Abstract: 2N6076
Contextual Info: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Unit VCBO Collector-Base Voltage Parameter -25 V VCEO Collector-Emitter Voltage

2N6076

Abstract: fairchild low power transistor
Contextual Info: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage

transistor 3683

Abstract: 2N6076
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

"to-98" package

Abstract: 2N5172
Contextual Info: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a

Contextual Info: 2N6076 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.100 h(FE) Max. Current gain.500

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N5309

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN

2N4425

Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N5306 equivalent

Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

IC cbe

Abstract: 2N6426 MPS3708
Contextual Info: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN *VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) *hfe(1kHZ) *r c ob NF ‘ oft (PF)

BTB 600 BR

Abstract: tp5372 2N5087 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356
Contextual Info: SPRAGUE/SEMICON» GROUP 8 5 140 19 SPRAGUE. T 3 ~ T ~ M flSIHflSO D G G 3 S 1 h ' b S E M I C O N D S / ICS • 93D 0 3 5 9 6 J P _ / T'û 7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

transistor bI 240

Abstract: TRANSISTOR a31
Contextual Info: DIE No. PNP Medium Power TRANSISTOR DIE No. •MAXIMUM RATINGS T A=25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V 6 V 800 mA Parameter A—31 Emitter-Base Voltage ■ DESCRIPTION V ebo Collector Current Continuous