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    2N630 Price and Stock

    Microchip Technology Inc 2N6301

    NPN TRANSISTOR
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    DigiKey 2N6301 Bulk 248 1
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    Central Semiconductor Corp CP127-2N6301-CT5

    TRANS NPN DARL 80V 8A DIE 1=5PCS
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    DigiKey CP127-2N6301-CT5 Tray 12 1
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    Microchip Technology Inc 2N6306

    NPN TRANSISTOR
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    Microchip Technology Inc 2N6300

    TRANS NPN DARL 60V 8A TO66
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    Onlinecomponents.com 2N6300
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    Microchip Technology Inc 2N6301P

    POWER BJT
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    Find more 2N630 price and stock on Findchips.com

    2N630 Datasheets (261)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N630 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N630 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N630 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N630 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N630 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N630 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N630 Unknown Vintage Transistor Datasheets Scan PDF
    2N630 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N630 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N630 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N630 Semitron Germanium Power Transistors Scan PDF
    2N630 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N6300 Microsemi TRANS DARLINGTON PNP 60V 8A 2TO-213AA - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6300 Motorola Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6300 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6300 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6300 Central Semiconductor BJT, NPN, Power Transistor, IC 8A - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6300 Mospec POWER TRANSISTORS(8A, 75W) - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6300 Mospec Darlington Complementary Silicon Power Transistor Scan PDF
    2N6300 Motorola European Master Selection Guide 1986 Scan PDF
    ...

    2N630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6304

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz


    Original     		PDF 2N6304 2N6304

    2N6303

    Abstract: No abstract text available
    Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF 2N6303 O205AD) 1-Aug-02 2N6303

    2n6304

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz


    Original     		PDF 2N6304 2N6304

    2N6300

    Abstract: No abstract text available
    Text: 2N6300 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N6300 O213AA) 1-Aug-02 2N6300

    2N6304

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz


    Original     		PDF 2N6304 MSC1323 2N6304

    Untitled

    Abstract: No abstract text available
    Text: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS


    Original     		PDF 2N3719. 2N3720 2N3867. 2N3868 2N6303 3N17II

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process


    Original     		PDF 2N6298 2N6299 2N6300 2N6301 100mA 2N6299, 2N6301) 100kHz

    2N6303

    Abstract: No abstract text available
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)


    Original     		PDF 2N6303 MSC1062 2N6303

    60N60

    Abstract: 2N6300
    Text: 2N6300 60 V darlington complementary NPN silicon power transistor 9.00 Transistors D. Page 1 of 2 Enter Your Part # Home Part Number: 2N6300 Online Store 2N6300 Diodes 60 Transistors V darlington complementary NPN silicon transistor Integrated Circuits Optoelectronics


    Original     		PDF 2N6300 2N6300 com/2n6300 60N60

    Untitled

    Abstract: No abstract text available
    Text: 2N6306 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6306 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6308 Features • • • NPN Silicon Power Transistors For switching power supply applications 700V collector-base breakdown capability


    Original     		PDF 2N6308 300Vdc,

    Untitled

    Abstract: No abstract text available
    Text: 2N6300 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N6300 O213AA) 30-Jul-02

    2n6300

    Abstract: No abstract text available
    Text: NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage


    Original     		PDF 2N6300 2N6301 MIL-PRF-19500/539 O-213AA) 2N6300

    2N6301 applications

    Abstract: TO-213AA 1000C 2N6300 2N6301
    Text: TECHNICAL DATA 2N6300 JTX, JTXV 2N6301 JTX, JTXV Processed per MIL-PRF-19500/539 NPN DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C 1


    Original     		PDF 2N6300 2N6301 MIL-PRF-19500/539 2N6300 2N6301 1000C O-213AA) 2N6301 applications TO-213AA 1000C

    2N6302

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N6302 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage


    Original     		PDF 2N6302 16oltage 2N6302

    2N2880

    Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
    Text: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B


    Original     		PDF 2N2658 2N2814 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N2880 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749

    2N6304

    Abstract: No abstract text available
    Text: LE.I\E,UtJ tSe.ml-Condiicto'i ^Pioduct*., One. Cf TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise


    Original     		PDF 2N6304 2N6304

    2N6301

    Abstract: No abstract text available
    Text: 2N6300 and 2N6301 NPN Darlington Power Silicon Transistor Available Qualified per MIL-PRF-19500/539 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation.


    Original     		PDF 2N6300 2N6301 MIL-PRF-19500/539 O-213AA O-213AA T4-LDS-0171, 2N6301

    2N6298

    Abstract: 2N6299 2N6300 2N6301
    Text: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )


    OCR Scan     		PDF 2N6298, 2N6299 2N6300, 2N6301 2N6300 2N6299, 2N6301 2N6300 2N6298

    2NG307

    Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655
    Text: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass


    OCR Scan     		PDF 2N6306 2N6307 N6308 600nsl 2N6308 2NG307 ns802 2N6308 unitrode 655

    2N6306

    Abstract: 2n6307 TO-204aa MICROSEMI PACKAGE OUTLINE 2N6308
    Text: 61 1 5 9 5 0 MICROSEMI CORP/POWER DB DE j b l l S i S O 02E~W£12 OODOms D a |~ 2N6306 2N6307 2N6308 TECHN O LO G Y Power Technology Components HIGH VOLTAGE NPN TRANSISTORS 8 AMPERES 700 VOLTS FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 700 Volts


    OCR Scan     		PDF 2N6306 2N6307 2N6308 2N6306, 2N6308 2N6306 TO-204aa MICROSEMI PACKAGE OUTLINE

    2N6307 Motorola

    Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
    Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


    OCR Scan     		PDF k3k72S4 2N6303 2N6306 2N6307, 2N6308 2N6306 2N6307 2N6308 2N6306, 2N6307 Motorola 2N6303 2n6308 motorola

    Untitled

    Abstract: No abstract text available
    Text: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.


    OCR Scan     		PDF 2N6306 2N6306

    2n6306

    Abstract: 2N6307 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a
    Text: Datasheet 2N6306 2N6307 2N6308 Central Sem iconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 Case Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		PDF 2N6306 2N6307 2N6308 2N6306, 2N6307, 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a