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    2N6306 Price and Stock

    Microchip Technology Inc 2N6306

    NPN TRANSISTOR
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    Microchip Technology Inc 2N6306T1

    POWER BJT
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    Microchip Technology Inc JAN2N6306

    TRANS NPN 250V 8A TO204AA
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    Microchip Technology Inc JANTXV2N6306

    TRANS NPN 250V 8A TO204AA
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    Microchip Technology Inc 2N6306JANTX

    Transistor GP BJT NPN 250V 8A 2-Pin TO-3 - Bulk (Alt: JANTX2N6306)
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    2N6306 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6306 Central Semiconductor POWER TRANSISTORS TO-3 CASE Original PDF
    2N6306 Central Semiconductor NPN Silicon Transistor Original PDF
    2N6306 Microsemi NPN POWER SILICON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=8 / Hfe=15-75 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6306 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=8 / Hfe=15-75 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6306 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6306 Central Semiconductor Npn Silicon Transistor Scan PDF
    2N6306 Diode Transistor Silicon Transistors Scan PDF
    2N6306 Diode Transistor Transistor Short Form Data Scan PDF
    2N6306 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6306 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6306 Motorola Switchmode Datasheet Scan PDF
    2N6306 Motorola The European Selection Data Book 1976 Scan PDF
    2N6306 Motorola European Master Selection Guide 1986 Scan PDF
    2N6306 Motorola Power Transistor Selection Guide Scan PDF
    2N6306 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6306 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6306 Unknown Transistor Replacements Scan PDF
    2N6306 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6306 Unknown Transistor Replacements Scan PDF
    2N6306 Unknown Transistor Replacements Scan PDF

    2N6306 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6306 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N6306 O204AA) 18-Jun-02 PDF

    2N6306

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N6306 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,


    Original
    2N6306 2N6306 PDF

    2N6306

    Abstract: No abstract text available
    Text: 2N6306 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N6306 O204AA) 31-Jul-02 2N6306 PDF

    2N6306

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6306 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,


    Original
    2N6306 2N6306 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6306 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N6306 O204AA) 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 498 Qualified Level Devices 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Units VCEO VCBO VEBO IC IB Vdc Vdc Vdc Adc Adc W W C 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0


    Original
    MIL-PRF-19500/ 2N6306 2N6308 2N6306 1000C 1750C, O-204AA) MIL-PRF-19500/498) PDF

    2N6308

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Units VCEO VCBO VEBO IC IB Vdc Vdc Vdc Adc Adc W W C 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0


    Original
    MIL-PRF-19500/498 2N6306 2N6308 2N6306 1000C 1750C, O-204AA) MIL-PRF-19500/498) 2N6308 PDF

    2N6306

    Abstract: 2N6308 1000C
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current


    Original
    MIL-PRF-19500/498 2N6306 2N6308 1000C 1750C, O-204AA) MIL-PRF-19500/498) 2N6306 2N6308 1000C PDF

    2N6308

    Abstract: 2N6306 1000C
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Units VCEO VCBO VEBO IC IB Vdc Vdc Vdc Adc Adc W W C 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0


    Original
    MIL-PRF-19500/498 2N6306 2N6308 2N6306 1000C 1750C, O-204AA) MIL-PRF-19500/498) 2N6308 1000C PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6306+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)500 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u° @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)8.0


    Original
    2N6306 time600n PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2N6306

    Abstract: 2n6307 TO-204aa MICROSEMI PACKAGE OUTLINE 2N6308
    Text: 61 1 5 9 5 0 MICROSEMI CORP/POWER DB DE j b l l S i S O 02E~W£12 OODOms D a |~ 2N6306 2N6307 2N6308 TECHN O LO G Y Power Technology Components HIGH VOLTAGE NPN TRANSISTORS 8 AMPERES 700 VOLTS FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 700 Volts


    OCR Scan
    2N6306 2N6307 2N6308 2N6306, 2N6308 2N6306 TO-204aa MICROSEMI PACKAGE OUTLINE PDF

    2N6307 Motorola

    Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
    Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


    OCR Scan
    k3k72S4 2N6303 2N6306 2N6307, 2N6308 2N6306 2N6307 2N6308 2N6306, 2N6307 Motorola 2N6303 2n6308 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.


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    2N6306 2N6306 PDF

    2N6306

    Abstract: No abstract text available
    Text: 2N6306 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie IB VeE Pd is s Tj Ts t g 0 je 8.0 A 4.0 A 250 V 125 W @ Te %25 0C -65 0C to +200 0C


    OCR Scan
    2N6306 PDF

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


    OCR Scan
    QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285 PDF

    2N6306

    Abstract: 2N6307 2n6308 zn63 2N6307 Motorola
    Text: #% • im-_ -4 ^ iy ^ « M > - jw y g .'á MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VO LTAG E NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage Inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


    OCR Scan
    2N6306 2N6307, 2N6308 2NS306 2N6307 --2N6306, 2N6308 2N6306 2N6307 zn63 2N6307 Motorola PDF

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


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    O-111 O-5/39 O-114 2N5415 PDF

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


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    Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937 PDF

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan
    bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375


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    2N6249 2N6250 2N6251 2N6253 2N6254 2N6248 2N6282 2N6285 2N6547 2N6576 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


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    5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF

    2NG307

    Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655
    Text: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass


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    2N6306 2N6307 N6308 600nsl 2N6308 2NG307 ns802 2N6308 unitrode 655 PDF