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    2N6339 Price and Stock

    Microchip Technology Inc 2N6339

    NPN TRANSISTOR
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    Onlinecomponents.com 2N6339
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    Solid State Devices Inc (SSDI) 2N6339

    To 3 25 Amp Silicon Transistor Rohs Compliant: Yes |Solid State 2N6339
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    Motorola Semiconductor Products 2N6339

    Bipolar Junction Transistor, NPN Type, TO-3
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    Quest Components 2N6339 80
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    2N6339 62
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    2N6339 21
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    2N6339 1
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    GTCAP 2N6339

    Bipolar Junction Transistor, NPN Type, TO-3
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    Quest Components 2N6339 17
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    2N6339 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6339 On Semiconductor High-Power NPN Silicon Transistors Original PDF
    2N6339 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6339 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6339 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N6339 API Electronics 25 Amp Transistors Scan PDF
    2N6339 Boca Semiconductor HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6339 Diode Transistor Transistor Short Form Data Scan PDF
    2N6339 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6339 Mospec POWER TRANSISTOR(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6339 Mospec High-Power NPN Silicon Transistor Scan PDF
    2N6339 Motorola The European Selection Data Book 1976 Scan PDF
    2N6339 Motorola European Master Selection Guide 1986 Scan PDF
    2N6339 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6339 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6339 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6339 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6339 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6339 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6339 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6339 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N6339 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6339

    Abstract: 2N6340 2N6338 2N6341 2N6436
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier


    Original
    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


    Original
    PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    Untitled

    Abstract: No abstract text available
    Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6339X O204AA) 16-Jul-02

    equivalent to tip162

    Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338


    Original
    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632

    2N6339

    Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D
    Text: MOTOROLA Order this document by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


    Original
    PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D

    2N6339X

    Abstract: No abstract text available
    Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6339X O204AA) 31-Jul-02 2N6339X

    2N6339ACECC

    Abstract: No abstract text available
    Text: 2N6339ACECC Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6339ACECC O204AA) 31-Jul-02 2N6339ACECC

    Untitled

    Abstract: No abstract text available
    Text: 2N6339ACECC Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6339ACECC O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6339X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6339X O204AA) 18-Jun-02

    NPN Transistor VCEO 80V 100V

    Abstract: 2N6338 2N6341 Vce(sat) 2N6339 2N6340 6341
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed


    Original
    PDF 2N6338/6339/6340/6341 2N6338 2N6339 2N6340 2N6341 NPN Transistor VCEO 80V 100V 2N6338 2N6341 Vce(sat) 2N6339 2N6340 6341

    2N6341

    Abstract: 2N6338 2N6340 2N6339 2N6436
    Text: JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6436~38 APPLICATIONS ・For use in industrial-military power amplifier


    Original
    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6340 2N6339 2N6341

    Untitled

    Abstract: No abstract text available
    Text: 2N6339ACECC Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6339ACECC O204AA) 18-Jun-02

    2N6437

    Abstract: 2N6339 2N6341 2N6438
    Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


    Original
    PDF 2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2N5330

    Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846

    2N2820

    Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
    Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63


    OCR Scan
    PDF 000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340

    2N6341

    Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor
    Text: HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan
    PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


    OCR Scan
    PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330

    Untitled

    Abstract: No abstract text available
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771

    2N2823

    Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
    Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846

    2N6339

    Abstract: 2N6338 2N6340 2N6341
    Text: Æà MOS PEC HIGH-POWER NPN SILICON TRANSISTORS NPN 2N6338 2N6339 2N6340 2N6341 . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=30-120 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan
    PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz)

    2N5437

    Abstract: 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339
    Text: - "í . 00^3592 A P I A P I ELECTRONICS INC ~ ELECTRONICS INC 117= 26C 00236 2b .33-01 ¡>E^aOM3Sia [1000331. O . COIiLECTOR CURRENT = 2 5 AMPS NPN TŸPES D evice No C ase VCBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341


    OCR Scan
    PDF 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N5437

    Untitled

    Abstract: No abstract text available
    Text: e l e c t r o n i c s in c . SECTION 2 COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case VcBO Volts 2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 TO -63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 v CEO su s Volte Ve b o Volts 7 7 6 6 6 6 90 60 100


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 2N2823 2N2824 2N2825 2N3771

    2N4071

    Abstract: 2N6277 JANTX 2N6277 2N4070
    Text: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120


    OCR Scan
    PDF T0-204 2N4070 2N4071 2N5622 2N5624 2N5626 2N5628 2N6274* 2N6275 2N6276 2N6277 JANTX 2N6277