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    2N637 Price and Stock

    Microchip Technology Inc 2N6372

    TRANS PNP 80V 6A TO66
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    Microchip Technology Inc 2N6373

    TRANS PNP 60V 6A TO66
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    Microchip Technology Inc 2N6377

    PNP TRANSISTOR
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    Microchip Technology Inc 2N6374

    TRANS PNP 40V 6A TO66
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    Microchip Technology Inc 2N6379

    POWER BJT
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    Find more 2N637 price and stock on Findchips.com

    2N637 Datasheets (233)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N637 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N637 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N637 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N637 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N637 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N637 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N637 Unknown GE Transistor Specifications Scan PDF
    2N637 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N637 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N637 Unknown Vintage Transistor Datasheets Scan PDF
    2N637 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N637 Semitron Germanium Power Transistors Scan PDF
    2N637 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N6370 Motorola The European Selection Data Book 1976 Scan PDF
    2N6370 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6370 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6370 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6370 Unknown Transistor Replacements Scan PDF
    2N6370 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6370 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2N637 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5955

    Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
    Text: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching


    Original     		PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 2N5954 2N5955 2N5956 2N6374

    2N6378

    Abstract: 2N6379 2N6274 2N6377 MR850
    Text: MOTOROLA Order this document by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379/D* 2N6379/D 2N6378 2N6379 2N6274 2N6377 MR850

    Delco

    Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


    Original     		PDF

    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Text: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


    Original     		PDF 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136 2N1159 2N1537 N1137 Germanium power

    2N6254

    Abstract: 2N6253 2n6371 e978
    Text: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.


    Original     		PDF 2N6253 2N6254 2N6371 2N6253, 2N6254, 2N6371 2N6253 2N6254 e978

    2N5034 package

    Abstract: 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


    Original     		PDF So10u 1200n O-220 O-220AB O-218var 2N5034 package 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199

    2N6371

    Abstract: No abstract text available
    Text: JMnic Product Specification 2N6371 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation capability ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers


    Original     		PDF 2N6371 2N6371

    2N6254

    Abstract: 2N6253 2n6371 IC16 Packages 1
    Text: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.


    Original     		PDF 2N6253 2N6254 2N6371 2N6253, 2N6254, 2N6371 2N6254 2N6253 IC16 Packages 1

    2n6371

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6371 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High dissipation capability ·Excellent safe operating area APPLICATIONS ·Series and shunt regulators ·High-fidelity amplifiers


    Original     		PDF 2N6371 2n6371

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    tl2222a

    Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
    Text: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904


    Original     		PDF UPI2222B PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 P2N2222A tl2222a 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252

    2N6372

    Abstract: 2N6373 2N6374
    Text: SavantIC Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wide-band amplifier applications


    Original     		PDF 2N6372 2N6373 2N6374 2N6372 2N6373 2N6374

    2N6373

    Abstract: No abstract text available
    Text: 2N6373 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N6373 O213AA) 1-Aug-02 2N6373

    2N6374

    Abstract: 2N6372 2N6373
    Text: Inchange Semiconductor Product Specification 2N6372 2N6373 2N6374 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for switching and wide-band amplifier applications


    Original     		PDF 2N6372 2N6373 2N6374 2N6372 2N6373 2N6374

    2N5954

    Abstract: 2N5956 2N5955 2N6372 2N6373 2N6374
    Text: 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base


    Original     		PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 300mA 24-November 2N5956 2N6374

    Untitled

    Abstract: No abstract text available
    Text: ucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 A , A, POWER CONVERTER TRANSISTORS 2N637, 2N637A, and 2N637B are a series of high gain transistors especially designed as high current switching


    Original     		PDF 2N637, 2N637A, 2N637B 2N637A 2N637B 2N637

    2N6377

    Abstract: 2N6378 2N6379 2N637
    Text: MOTOROLA xstrs/ r sc 12E 0 § f b3b?2S4 Q0fi4b3fc. T | • f- 3 0 '2 3 2N6377 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N6379 HIGH-POWER PNP SILICON TRANSISTORS . . . designed for use in industrial-military power amplifier and switching circuit applications.


    OCR Scan     		PDF aG04b3b 2N6377 2N6379 2N6378 25/is 2N6274-77 2N6377 2N6378 2N6379 2N637

    Untitled

    Abstract: No abstract text available
    Text: Il 2N6371HV 2N6371HV NPN POWER TRANSISTOR High-fidelity Amplifier and Power Switching Circuit Applications DIM A B MIN - C 6,35 D 0 ,9 6 E F G H J K L 29,90 10,69 5.20 M 3,84 1 6 ,6 4 11,15 - ABSOLUTE MAXIMUM RATINGS C ollector-base voltage open em itter


    OCR Scan     		PDF 2N6371HV 2N6371HV 100VcEOfsus)

    2N6371

    Abstract: 2N6254
    Text: 2N6253, 2N6254, 2N6371 CDÎL 2N6253, 6254, 6371 NPN POWER TRANSISTORS High-fidelity Amplifier and Power Switching Circuit Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 — - 6.35 0,96 - 29,90


    OCR Scan     		PDF 2N6253, 2N6254, 2N6371 2N6371 2N6254

    65k5

    Abstract: 2N637 1B12A 100SS 2N5955 2N6373 npn 100n 1a transistor 2N5956 100OE 2N5954
    Text: Ceiifm l sem iconductor Corp. Central Sem iconductor Corp. 1 4 5 Adam s Avenue Hauppauge, New York 11 7 8 8 DESCRIPTI0N The CENTRAL SEMICONDUCTOR 2N5954, 2N6372 series types are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed


    OCR Scan     		PDF 2N5954 2N5955 2N5956 2N6372 2N6373 2N637' 2N595^ 2N6372 2N6373 65k5 2N637 1B12A 100SS npn 100n 1a transistor 2N5956 100OE

    RCA 40251

    Abstract: rca 2n6254 2N3055H RCA 40251 2N3055H 2N6254 2N6253 2n6254 rca 2N6371 S 40251
    Text: SEMELAB UIIHB POWER TR A N S ISTO R S 2N3055H, 2 N 6 2 5 3 , 2N 6254, 2N6371, 40251 H o m e ta x ia l-B a s e High-Power Silicon N -P -N Transistors • 2 N 6 2 5 4 : prem ium type fro m 2 N 3 0 5 5H Rugged, Broadly Applicable Devices For Industrial and Commercial Use


    OCR Scan     		PDF 2N3055H, 2N6253, 2N6254, 2N6371, 2N3055H 2N6253 2N6254 RDF-10: RCA 40251 rca 2n6254 2N3055H RCA 40251 2N6254 2n6254 rca 2N6371 S 40251

    2N6379

    Abstract: FF 030 PK
    Text: MOTOROLA Order this document by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors ‘ M otorola Preferred Device . . . designed for use in industrial-m ilitary power amplifier and switching circuit applications. • • • •


    OCR Scan     		PDF 2N6379/D 2N6379 2N6274-77 2N6379* 97A-05 O-204AE FF 030 PK

    2N6583

    Abstract: 2N6736
    Text: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469


    OCR Scan     		PDF 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281 2N6314 2N6338 2N6339 2N6340 2N6583 2N6736

    2n6254

    Abstract: rca 2n6254 2N6371 2N6253 2n6254 rca ITT 2201 i944
    Text: P ow er Transistors File N um b er HARRIS 2N6253, 2N6254, 2N6371 1077 SEMICOND SECTOR 27E D H 4302571 DDLTIhS T *HAS T - 3 3 -1 3 High-Power Silicon N-P-N Transistors For Industrial and C om m ercial Use Features: • Maxim um safe-area-of-operation curves


    OCR Scan     		PDF 2N6253, 2N6254, 2N6371 TQ-204AA RCA-2N6253, 2N6371 2N6254. 2N6371. CSH2J07RJ 2n6254 rca 2n6254 2N6253 2n6254 rca ITT 2201 i944