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    Microchip Technology Inc 2N6510

    POWER BJT
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    2N6510 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6510 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    2N6510 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6510 API Electronics Short form transistor data Short Form PDF
    2N6510 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6510 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6510 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6510 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6510 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6510 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6510 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6510 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6510 Unknown Transistor Replacements Scan PDF
    2N6510 Unknown Transistor Replacements Scan PDF
    2N6510 Unknown Transistor Replacements Scan PDF
    2N6510 Unknown Transistor Replacements Scan PDF
    2N6510 Unknown Transistor Replacements Scan PDF
    2N6510 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6510 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-3 Scan PDF
    2N6510 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N6510 PPC Products Transistor Short Form Data Scan PDF

    2N6510 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6510 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6510 O204AA) 18-Jun-02

    2n6510

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6510 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive


    Original
    PDF 2N6510 2n6510

    2N6510

    Abstract: No abstract text available
    Text: 2N6510 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6510 O204AA) 31-Jul-02 2N6510

    BU1040

    Abstract: ir431 IR430 2SC1865 IR423 BU104 2sc1865 nec ir411 RCA1B09 RCA410
    Text: POWER SILICON NPN Item Number Part Number I C • 5 10 20 2S0917 SOT31303 2N6510 BU406 2SC3591 RCA1B04 2SC3175 2SC3176 BUY18S lR4TO" 25 30 35 · 40 45 50 55 60 65 70 75 · 80 RCA410 SML31305 SOT31305 2N6511 B0550B 2SC1864 2SC1867 RCA1B05 BUX62 SK3217 RCA1B09


    Original
    PDF -f40J BU1040 ir431 IR430 2SC1865 IR423 BU104 2sc1865 nec ir411 RCA1B09 RCA410

    Untitled

    Abstract: No abstract text available
    Text: 2N6510 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6510 O204AA) 16-Jul-02

    ssp11n60s5

    Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
    Text: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:


    Original
    PDF SSP11N60S5 SSP2N90A O-220AB/TO-220 SSP2N80A O-204AA/TO-3: TIP536 TIP538 ssp11n60s5 SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5

    2N6510

    Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
    Text: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass


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    PDF 2N6510 2N6511 2N6512 2N6513 2N6514 2NG510 2N6514

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687


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    PDF 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327

    JANTX 2N6340

    Abstract: 2N6686 815 transistor 2N6032 Transistor 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS NPN TO-3 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 2N6338A 2N6340 2N6341A 2N6354 2N6510 2N6511 2N6512 2N6676A 2N6677 2N6678A


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    PDF 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 JANTX 2N6340 2N6686 815 transistor 2N6032 Transistor

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


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    PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


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    PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    RCA 40872

    Abstract: rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor 40872 rca rca 40636 RCA 40636 transistor RCA 40360 rca 40594
    Text: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.


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    PDF Pj-36W ITO-66) 136x136 2N6337 2N6534 2N6535 2N6536 2N6537 2N6385 RCA 40872 rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor 40872 rca rca 40636 RCA 40636 transistor RCA 40360 rca 40594

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447

    TRANSISTOR C 6090 npn

    Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
    Text: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design


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    PDF O-22Q RCS683 2N6537 2N6530 2N6388 2N6666 2N6650 RCA8766 2N6284 2N6287 TRANSISTOR C 6090 npn RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415

    RCA Power Transistor TO-3 4 225

    Abstract: 2n5415 complementary driver transistor hfe 60-100 RCA Power Transistor 4 225 RCA 2n6388 2N5415 audio output TRANSISTOR NPN 2N3439 2N5240 2N6079
    Text: High-Voltage Power Transistors Applica ti 3ns A wide variety of high-power, medium-power, high-current, and fast-switching types in JEDEC TO-3, TO-39, TO-66, T0-202 VERSATAB, and TO-220 VERSAWATT package. _ »Hiqh-vcDit age differential and operational amplifi er13


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    PDF T0-202 O-220 O-22Q RCS683 2N6537 2N6530 2N6388 2N6666 2N6650 RCA8766 RCA Power Transistor TO-3 4 225 2n5415 complementary driver transistor hfe 60-100 RCA Power Transistor 4 225 RCA 2n6388 2N5415 audio output TRANSISTOR NPN 2N3439 2N5240 2N6079

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


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    PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


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    PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS


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    PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    2N6514

    Abstract: 40852 BU106 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6514 40852 BU106 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251

    2N3055 RCA

    Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N3055 RCA RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410

    BUX18

    Abstract: power darlington 100W Darlington 30A 150V 2n6510 BU106 power darlington 200V, 30A 2n3055 regulator 10a 2N6513 2N5240 2N5805
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 BUX18 power darlington 100W Darlington 30A 150V 2n6510 BU106 power darlington 200V, 30A 2n3055 regulator 10a 2N6513 2N5240 2N5805

    2N6226

    Abstract: 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385
    Text: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3


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    PDF DDD0231 00Z31 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6226 2N6385

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680