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    2N6573 Search Results

    2N6573 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6573 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=10 / Hfe=7-21 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6573 Diode Transistor Transistor Short Form Data Scan PDF
    2N6573 Diode Transistor Transistor Short Form Data Scan PDF
    2N6573 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6573 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6573 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6573 Unknown Transistor Replacements Scan PDF
    2N6573 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6573 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N6573 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6573 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6573 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6573 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6573 New England Semiconductor NPN TO-3 Transistor Scan PDF

    2N6573 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6573

    Abstract: No abstract text available
    Text: 2N6573 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6573 O204AA) 31-Jul-02 2N6573 PDF

    2n6573

    Abstract: No abstract text available
    Text: 2N6573 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6573 O204AA) 18-Jun-02 2n6573 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6573 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6573 O204AA) 16-Jul-02 PDF

    DTS517

    Abstract: BUV28A
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


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    SDT7207 SDT7612 2N2229 2N3473 2N2233 2N3477 SDT12201 DTS517 BUV28A PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator PDF

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 PDF

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 PDF

    2N2712

    Abstract: 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712
    Text: CRO M PS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION T he above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .


    OCR Scan
    I6O111W PS/2N6573 T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn® MPS/2N2716 MPS/2N2923 MPS/2N2924 2N2712 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712 PDF

    2n2711

    Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
    Text: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A


    OCR Scan
    MPS/2N6573 I6O111W T0-92A T0-92B MPS/2N2711 MPS/2N27I2 12pFii MPS/2N2716 MPS/2N2923 MPS/2N2924 2n2711 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716 PDF

    2N6575

    Abstract: MJ13014 2N6583 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543
    Text: Type* PUP Comp] •- VUO tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan
    2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6575 MJ13014 2N6583 PDF

    2N5804

    Abstract: 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2N6546 2N6547
    Text: Type* PUP Comp] •- VU0 tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan
    2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6547 PDF

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan
    Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937 PDF

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan
    bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan
    5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan
    0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF