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Microchip Technology Inc 2N6762 MOSFET N-CH 500V 4.5A TO204AA
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Microchip Technology Inc JANTX2N6762 MOSFET N-CH 500V 4.5A TO204AA
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Microchip Technology Inc JANTXV2N6762 MOSFET N-CH 500V 4.5A TO204AA
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DigiKey	JANTXV2N6762	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG JANTX2N6762 Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-3 - Bulk (Alt: JANTX2N6762)
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Avnet Americas	JANTX2N6762	Bulk			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Keysight Technologies N6762A Modular Power Supplies Precision DC Power Module 50V, 3A, 100W
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Mouser Electronics	N6762A					1 $4067 10 $4067 100 $4067 1000 $4067 10000 $4067	Get Quote

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2N6762 Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6762	International Rectifier	HEXFET TRANSISTORS	Original	PDF
2N6762	Microsemi	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-3	Original	PDF
2N6762	Microsemi	N Channel MOSFET; Package: TO-204AA;	Original	PDF
2N6762	Fairchild Semiconductor	N-Channel Power MOSFETs, 4.5A, 450V/500V	Scan	PDF
2N6762	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.	Scan	PDF
2N6762	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
2N6762	International Rectifier	TO-3 N-Channel HEXFETs	Scan	PDF
2N6762	IXYS	High Voltage Power MOSFETs	Scan	PDF
2N6762	IXYS	High Voltage Power MOSFETs	Scan	PDF
2N6762	Motorola	Switchmode Datasheet	Scan	PDF
2N6762	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6762	Motorola	Power Transistor Selection Guide	Scan	PDF
2N6762	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2N6762	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N6762	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6762	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6762	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6762	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6762	Unknown	FET Data Book	Scan	PDF
2N6762	National Semiconductor	N-Channel Power MOSFETs	Scan	PDF

2N6762 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DD 127 D TRANSISTOR Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760 Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers	Original	2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465	PDF
Untitled Abstract: No abstract text available Text: 2N6762+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	2N6762	PDF
Untitled Abstract: No abstract text available Text: 2N6762+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	2N6762	PDF
2N6762 Abstract: No abstract text available Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6762 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)	Original	MIL-PRF-19500/542 2N6762 O-204AA) T4-LDS-0151 2N6762	PDF
Untitled Abstract: No abstract text available Text: 2N6762+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	2N6762	PDF
2N6762 Abstract: TRANSISTOR to 204aa Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6762 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)	Original	MIL-PRF-19500/542 2N6762 O-204AA) T4-LDS-0151 2N6762 TRANSISTOR to 204aa	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6762 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)	Original	MIL-PRF-19500/542 2N6762 O-204AA) T4-LDS-0151	PDF
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065	PDF
2N6761 Abstract: No abstract text available Text: 2N 6761 2N6762 23 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Pa ckage T O -2 0 4 A A * 4.0A and 4.5A, 450V - 500V B O T T O M V IE W * rDS on = 1-5fî and 2.o n DRAIN f (FLANGE) SO U R C E * S O A is Power-Dissipation Limited	OCR Scan	2N6762 2N6761 2N6761.	PDF
2N6761 Abstract: 2N6762 2N6767 2nc762 Text: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi	OCR Scan	T-39-11 2N6761, 2N6762 2N6761 2N6762 3fi75Dfll 2N6767 2nc762	PDF
jfet selector guide Abstract: T0-220SM Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763	OCR Scan	2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM	PDF
1N6801 Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761 Text: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768	OCR Scan	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 1N6801 2N6767 2n6800 2N6759 2N676 2N6761	PDF
RF432 Abstract: IRF449 IRF460 IRFac32 Text: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32	OCR Scan	IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 RF432 IRF460 IRFac32	PDF
Untitled Abstract: No abstract text available Text: NATL N-Channel Power MOSFETs Continued IRF732 IRF733 MTP5N35 2N6761 2N6762 IRF431 IRF830 IRF831 IRF833 TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) T0-204AA (42) TO-2Û4AA (42) TO-220 (37) TO-220	OCR Scan	IRF732 IRF733 MTP5N35 MTP5N40 2N6761 2N6762 IRF430 IRF431 IRF432 IRF433	PDF

IRF448 Abstract: IRF449 irf9243 IRFAG52 IRFAF30 irf420 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE Text: THONSON/ DISTRIBUTOR SflE D • TD5t,fl73 DDDSflOfl T4b ■ TCSK W ggggg H EX FETw »«, — r c e c u iie r Hermetic Package l TO-3 N-Channel Part Number V p s Drain Source Voltage Volts IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452	OCR Scan	IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 irf9243 IRFAG52 IRFAF30 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE	PDF
2N6762 JANTX Abstract: 2N6762 2N6903 2N6162 2n6800 2N6761 2N6898 2N6904 power mosfets to 204aa 2N6898 JANTXV Text: Standard Power M OSFETs File Number 1589 2N6761, 2N6762 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V rD s on = 1.5 f i and 2.0 O o Q Features: • ■ ■ ■ ■ SOA is power-dissipation lim ited Nanosecond sw itching speeds	OCR Scan	2N6761, 2N6762 2N6761 2N6762 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6762 JANTX 2N6903 2N6162 2N6898 2N6904 power mosfets to 204aa 2N6898 JANTXV	PDF
1N7001 Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90 Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR	OCR Scan	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90	PDF
TDA 3780 Abstract: 2N6762 2N6761 Text: Standard Power M OSFETs 2N6761, 2N6762 File Number 1589 N-Channel Enhancement-Mode Power Field-Effect Transistors o 4.0A and 4.5A, 450V - 500V rD s on = 1.5 f i and 2.0 O Q Features: • SOA is po w e r-d issip ation lim ite d ■ N anosecond sw itc h in g speeds	OCR Scan	2N6761, 2N6762 2N6761 2N6762 I2N6761) 2N6762) TDA 3780	PDF
2N7003 Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759 Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• /!/ tt € f f t * £ ÍS T a = 2 5 '0	OCR Scan	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759	PDF
ulw diode Abstract: No abstract text available Text: UNITRODE CÔRP 9347963 TE UN I T R O D E CORP 92D POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel dË I cî347Tb3 D O l Q SC m 10504 2N6761 J, JTX, JTXV 2N6762 T ^ 3 < î ~ / \| FEATURES • Fast Sw itching • Low Drive C urrent DESCRIPTION The Unitrode pow er M OSFET design utilizes the m ost advanced technology available.	OCR Scan	347Tb3 2N6761 2N6762 ulw diode	PDF
TO-254 Abstract: T0-204 IRF450 equivalent Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS	OCR Scan	2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent	PDF
2n6152 Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90 Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (typ) (max) (pF) (max) typ (0) typ (A) Id (A) Vg s (V) typ (S) Id	OCR Scan	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90	PDF
lts 542 Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds	OCR Scan	2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B	PDF
QPL-19500 Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760 Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits	OCR Scan	2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760	PDF

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Microchip Technology Inc 2N6762

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2N6762 Datasheets (30)

2N6762 Datasheets Context Search

DD 127 D TRANSISTOR

Untitled

Untitled

2N6762

Untitled

2N6762

Untitled

IRF460

2N6761

2N6761

jfet selector guide

1N6801

RF432

Untitled

IRF448

2N6762 JANTX

1N7001

TDA 3780

2N7003

ulw diode

TO-254

2n6152

lts 542

QPL-19500