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    2N6896 Search Results

    2N6896 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6896 Fairchild Semiconductor TRANS MOSFET P-CH 100V 6A 2TO-204AA Original PDF
    2N6896 Fairchild Semiconductor -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Original PDF
    2N6896 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6896 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6896 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6896 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6896TX Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6896 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		PDF 2N6896 -100V, -100V 2N6896 O-204AA TB334 TB334

    2N6896

    Abstract: TB334
    Text: 2N6896 Data Sheet November 1998 File Number -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching


    Original     		PDF 2N6896 -100V, 2N6896 O-204AA -100V TB334 TB334

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    qpl-19500

    Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
    Text: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6896 2N6896 T0-204AA 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF qpl-19500 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6794 2N6794 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


    OCR Scan     		PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX

    2N6760

    Abstract: 2N6898 2N67 2N6759
    Text: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


    OCR Scan     		PDF 2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N6796 O-2I35AF O-205AF 2N6800 2N6898 2N67

    2N6895 JANTXV

    Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
    Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6895 2N689S 2N6895 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6895 JANTXV qpl-19500 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6897 2N6897 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 36485 2N6798 TRANSISTOR C 557 B 2N6901 IDM30 2N6904 qpl-19500

    2N6758

    Abstract: 2N6902 QPL-19500
    Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan     		PDF 2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500

    2n6798 jantx

    Abstract: 2N6798 IH0063 2N6756 QPL-19500
    Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited


    OCR Scan     		PDF 2N6798 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2n6798 jantx IH0063 2N6756 QPL-19500

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904

    2N7119

    Abstract: 2N7122 2N7121 2N6967 2N7243 2N724 2N6966 2N7123 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242
    Text: HARRIS SEMICOND SECTOR SbE T> • 430EE71 QÜ42235 ‘ìbb H H A S Military Power Products MOSFETs M ilitary Pow er Products Military and aerospace requirements for high—reliability solid-state devices are extremely large and diverse, not only in terms of performance, operating conditions, and


    OCR Scan     		PDF 430EE71 QG42235 TC5-204AA 2N7120 T0-204AA 2N7121 2N7122 2N7123 2N7119 2N6967 2N7243 2N724 2N6966 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    2N6784

    Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
    Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds


    OCR Scan     		PDF 2N6784 2N6784 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX

    2N6851

    Abstract: 2N6851 JANTX 2n6800
    Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF 2N6851 -200V cs-43 2N6851 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6851 JANTX

    Untitled

    Abstract: No abstract text available
    Text: • 4 3 0 B 5 7 1 0 0 S 4 S C H ETT ■ HAS 2M6896 2J HARRIS P-Channel Enhancement-Mode Power MOS Field-Effect Transistors August 1991 Features Package T0-204A A BOTTOM VIEW • -6 A , -1 0 0 V • rD S on = 0 .6 Î1 SOURCE • S O A is P ow er-D issip atio n Lim ited


    OCR Scan     		PDF 2M6896 T0-204A 92CS-40719 2N6896

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


    OCR Scan     		PDF 2N6901 2N6901 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6901 JANTX 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2N6897 JANTXV 2N6897

    2N6155

    Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited


    OCR Scan     		PDF 2N6755, 2N6756 0V-100V 2N6755 2N6756 2N6796 O-2I35AF O-205AF 2N6800 2N6155 2n6156 qpl-19500 2N6901 D-05N md-141 2N67 2N6756 JANTX