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    Taiwan Semiconductor TSM2N7000KCT-A3G

    MOSFET N-CHANNEL 60V 300MA TO92
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    DigiKey TSM2N7000KCT-A3G Ammo Pack
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    TSM2N7000KCT-A3G Cut Tape 1
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    Taiwan Semiconductor TSM2N7000KCT-B0G

    MOSFET N-CHANNEL 60V 300MA TO92
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    DigiKey TSM2N7000KCT-B0G Box 10,000
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    Taiwan Semiconductor TSM2N7000KCT A3G

    Transistor Power MOSFET N-CH 60V 300mA 3-Pin TO-92 Ammo - Boxed Product (Development Kits) (Alt: TSM2N7000KCT A3G)
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    Avnet Americas TSM2N7000KCT A3G Box 10,000
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    Taiwan Semiconductor TSM2N7000KCT B0G

    Transistor Power MOSFET N-CH 60V 300mA 3-Pin TO-92 Bulk - Boxed Product (Development Kits) (Alt: TSM2N7000KCT B0G)
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    EBV Elektronik TSM2N7000KCT B0G 54 Weeks 10,000
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    Rectron Semiconductor 2N7000K

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    Onlinecomponents.com 2N7000K
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    2N7000K Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7000KL Vishay Siliconix MOSFETs Original PDF
    2N7000KLTR1 Vishay TRANS., MOSFET 0.15A VN2222L Original PDF
    2N7000KL-TR1 Vishay Telefunken TRANS MOSFET N-CH 60V 0.47A 3TO-226AA T/R Original PDF
    2N7000KL-TR1-E3 Vishay Transistor Mosfet N-CH 60V 0.47A 3TO-226AA T/R Original PDF

    2N7000K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		PDF 2N7000K 100ms

    2N7000-TR1 equivalent

    Abstract: 2N7000 2n7000 equivalent 2N7000 MOSFET 2N7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents
    Text: Specification Comparison Vishay Siliconix 2N7000KL vs. 2N7000 Description: N-Channel, 60 V D-S MOSFET Package: TO-92 Pin Out: Identical Part Number Replacements: 2N7000KL-TR1 Replaces 2N7000-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free Version) Replaces 2N7000-TR1


    Original     		PDF 2N7000KL 2N7000 2N7000KL-TR1 2N7000-TR1 2N7000KL-TR1-E3 2N7000KL 2N7000 2N7000-TR1 equivalent 2n7000 equivalent 2N7000 MOSFET 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents

    2N7000KL-TR1-E3

    Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 18-Jul-08 2N7000KL-TR1-E3 BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX

    2N7000

    Abstract: 2n7000k
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		PDF 2N7000K 100ms 2N7000 2n7000k

    BS170KL

    Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL S-40247--Rev. 16-Feb-04 BS170KL 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173

    2N7000K

    Abstract: No abstract text available
    Text: 2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V HBM     Low On-Resistance: RDS(on) < 3 @ VGS = 10V High power and current handling capability Very fast switching Halogen free and RoHS compliant device


    Original     		PDF 2N7000K 7000K 28-MAR-12 KSD-T0A074-000 2N7000K

    2N7000KL

    Abstract: 170KL BS170KL-TR1 2N7000KL-TR1
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		PDF 2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL 08-Apr-05 2N7000KL 170KL BS170KL-TR1 2N7000KL-TR1

    7000k

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 7000K K 3 No. Item 2 608 4 Marking Description 2N Series Name 7000K Device Name KEC K KEC CORP. Lot No. 608 Device Name 2006. 2. 17 Revision No : 0 6


    Original     		PDF 2N7000K 7000K 7000k

    BS170KL

    Abstract: 2N7000KL AN609
    Text: 2N7000KL_BS170KL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF 2N7000KL BS170KL AN609 03-May-07

    2n7000k

    Abstract: No abstract text available
    Text: 2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V HBM     Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching Halogen free and RoHS compliant device


    Original     		PDF 2N7000K 7000K 28-MAR-12 KSD-T0A074-000 2n7000k

    bs170kl

    Abstract: No abstract text available
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		PDF 2N7000KL/BS170KL O-226AA 7000KL O-92-18RM 170KL 08-Apr-05 bs170kl

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・ESD Protected 2000V. A ・High density cell design for low RDS ON . ・Voltage controlled small signal switch. ・Rugged and reliable.


    Original     		PDF 2N7000K 100ms

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 1 1/4


    Original     		PDF 2N7000K

    2N7000

    Abstract: 2n7000kl equivalent 2N7000KL
    Text: SPICE Device Model 2N7000KL Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF 2N7000KL 18-Jul-08 2N7000 2n7000kl equivalent 2N7000KL

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    SOT23 PMOS

    Abstract: D0218 diode EGP 30b tSoP38xxx TSOP5700 2N7002x tSoP4xxx jfet to 92 TSOP34XXX SMD DO-213 ZENER DIODE
    Text: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2


    Original     		PDF Si6926ADQ Si6926ADQ-T1--E3 OP362XX, TSOP5700, TSOP52XX DIP4/8/16, SOT23 PMOS D0218 diode EGP 30b tSoP38xxx TSOP5700 2N7002x tSoP4xxx jfet to 92 TSOP34XXX SMD DO-213 ZENER DIODE

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)


    Original     		PDF 2N7000 2N7000A IRF510 IRF610 IRF620 IRF624 IRF630 IRF633 IRF634 IRFZ14

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    Untitled

    Abstract: No abstract text available
    Text: 2N7000K SEMICONDUCTOR N Channel MOSFET ESD Protected 2000V TECHNICAL DATA INTERFACE AM SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low R ds on)• Voltage controlled small signal switch. • Rugged and reliable.


    OCR Scan     		PDF 2N7000K