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    2N7002KDW Search Results

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    2N7002KDW Price and Stock

    PanJit Group 2N7002KDW_R1_00001

    MOSFET 2N-CH 60V 0.115A SOT363
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    DigiKey 2N7002KDW_R1_00001 Digi-Reel 24,686 1
    • 1 $0.21
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    2N7002KDW_R1_00001 Cut Tape 24,686 1
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    2N7002KDW_R1_00001 Reel 18,000 3,000
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    Chip One Stop 2N7002KDW_R1_00001 Cut Tape 3,000
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    Micro Commercial Components 2N7002KDWBQ-TP

    MOSFET 2N-CH 60V 0.22A SOT363
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    DigiKey 2N7002KDWBQ-TP Cut Tape 5,900 1
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    2N7002KDWBQ-TP Digi-Reel 5,900 1
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    2N7002KDWBQ-TP Reel 3,000 3,000
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    Mouser Electronics 2N7002KDWBQ-TP 3,000
    • 1 $0.45
    • 10 $0.284
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    Comchip Technology Corporation Ltd 2N7002KDW-HF

    MOSFET 2N-CH 60V 0.34A SOT363
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    DigiKey 2N7002KDW-HF Digi-Reel 2,970 1
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    2N7002KDW-HF Cut Tape 2,970 1
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    Mouser Electronics 2N7002KDW-HF 1,684
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    NAC 2N7002KDW-HF 3,000
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    Micro Commercial Components 2N7002KDW-TP

    MOSFET 2N-CH 60V 0.34A SOT363
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    DigiKey 2N7002KDW-TP Cut Tape 1,270 1
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    2N7002KDW-TP Digi-Reel 1,270 1
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    Mouser Electronics 2N7002KDW-TP 38,929
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    TME 2N7002KDW-TP 1,410 5
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    HY Electronic Corp 2N7002KDW

    MOSFET 2N-CH 60V 0.115A SOT363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    2N7002KDW Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002KDW PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET - ESD Protected Original PDF
    2N7002KDWA-TP Micro Commercial Components N-CHANNEL MOSFET EFFECT,SOT-363 Original PDF
    2N7002KDW-F2-0000HF Yangzhou Yangjie Electronics N-CH MOSFET 60V 0.34A SOT-363 Original PDF
    2N7002KDW-HF Comchip Technology MOSFET N-CH 60VDS 20VGS 340MA SO Original PDF
    2N7002KDW-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - N-CHANNEL,MOSFETS,SOT-363 PACKAG Original PDF

    2N7002KDW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N7002KDW-GP

    Abstract: wistron board JST-CON4-19-GP-U Godzilla
    Text: 5 4 3 2 1 H1 HOLE D 1 D ZZ.0HOLE.XXX 2 5V_S5 R1 100KR2J-1-GP PWRLED# 1 6 2 5 3 4 POWER BTN BOARD 1 2N7002KDW-GP PWRLED_1 U1 2ND = 84.00512.03F R2 LED1 PWRLED#_2 C K 5V_S5 A PWRLED#_3 LED-O-16-GP 1 2 07508-1 REVISION : 07201-1 C 560R2F-GP B B TO M/B CONNECT


    Original     		100KR2J-1-GP 2N7002KDW-GP LED-O-16-GP 560R2F-GP JST-CON4-19-GP-U SW-TACT-60-GP 2N7002KDW-GP wistron board JST-CON4-19-GP-U Godzilla PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		2N7002KDW 500mA 200mA OT-363 OT-363 MIL-STD-750 2010-REV PDF

    K27 mOSFET

    Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology


    Original     		2N7002KDW OT-363 500mA 200mA OT-363 2010-REV K27 mOSFET MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected PDF

    2N7002KDW

    Abstract: 2N7002KD sot363 marking 31 Small Signal MOSFET
    Text: 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits


    Original     		2N7002KDW 115mA, OT-363 MIL-STD-202, Pw300 31-Dec-2009 2N7002KDW 2N7002KD sot363 marking 31 Small Signal MOSFET PDF

    K27 SOT-363 MARKING

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.078(2.00)


    Original     		2N7002KDW 200mA 2002/95/EC OT-363 MIL-STD-750 2010-REV OT-363 K27 SOT-363 MARKING PDF

    2N7002KDW

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		2N7002KDW 500mA 200mA 2002/95/EC OT-363 MIL-STD-750 2N7002KDW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic


    Original     		2N7002KDW OT-363 SC-88) OT-363, MIL-STD-202, 09-Jan-09 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		2N7002KDW OT-363 500mA 200mA 2002/95/EC IEC61249 2010-REV RB500V-40 2N7002KDW PDF

    K2765

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 K2765 PDF

    sot-363 n-channel mosfet

    Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


    Original     		2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 sot-363 n-channel mosfet K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363 PDF

    Dual N-Channel mosfet sot-363

    Abstract: sot-363 n-channel mosfet sot-363 Marking G1 marking s1 sot363 2N7002KDW 2N7002DKW SOT363-6 sot-363 marking 20 SOT363 6 SOT-363 mosfet
    Text: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic


    Original     		2N7002KDW OT-363 SC-88) OT-363, MIL-STD-202, 09-Jan-09 2N7002DKW Dual N-Channel mosfet sot-363 sot-363 n-channel mosfet sot-363 Marking G1 marking s1 sot363 2N7002KDW 2N7002DKW SOT363-6 sot-363 marking 20 SOT363 6 SOT-363 mosfet PDF

    2N7002KDW

    Abstract: MosFET
    Text: 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits


    Original     		2N7002KDW 115mA, OT-363 MIL-STD-202, Pw300S, 31-Dec-2009 2N7002KDW MosFET PDF

    2n7002kdW

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET SOT-363 FEATURES z z z z z High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		OT-363 2N7002KDW OT-363 300mA -100A/Â 2n7002kdW PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002KDW N-channel MOSFET SOT-363 FEATURES z z z z z High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability


    Original     		OT-363 2N7002KDW OT-363 300mA -100A/Â PDF

    K0231

    Abstract: K0116 2N7002KDW-GP LED1421 2N7002KDW
    Text: 5 4 3 2 MEDIA BOARD High-End 1 REVISION :08544 48.4I204.0SA 2 5V_S0 1 R3 100KR2J-1-GP 2N7002KDW-GP AUDIO_LED_1 R18 D 1 5 2 LED10 2 1 A 4 3 U1 D 2ND = 84.00512.03F LED4 1AUDIO_LED#_3 2 K LED-O-16-GP 560R2F-GP R5 5V_S0 6 A AUDIO_LED#_2 K LED-O-16-GP 560R2F-GP


    Original     		4I204 100KR2J-1-GP 2N7002KDW-GP LED10 560R2F-GP LED-O-16-GP 560R2F-GP LED-O-16-GP K0231 K0116 LED1421 2N7002KDW PDF

    2N7002KDW-GP

    Abstract: 2N7002KDW wistron board 100KR2J-1-GP
    Text: 5 4 3 2 5V_S0 2 TO M/B CONNECT R4 100KR2J-1-GP 1 TPCONN1 26 FINGER PRONT 1 2N7002KDW-GP NUM_LED_1 D 6 1 5 2 4 NUM_LED# 5V_S5 FOR BATFULL,STDBY TP_DATA TP_CLK NUM_LED# CAP_LED# 3 LED3 1 NUM_LED#_3 A NUM_LED#_2 K SATA_LED# STDBY_LED# WLAN_LED# CHARGE_LED# DC_BATFULL#


    Original     		08545-SA 4I205 100KR2J-1-GP 2N7002KDW-GP 220R2J-L2-GP LED-O-16-GP 100KR2J-1-GP LED-B-67-GP-U2 2N7002KDW wistron board PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    winbond WPCE773

    Abstract: g547f2 GAP-CLOSE-PWR WPCE773 jv-71 ISL88731C RT8202A JV71 2204mA BT143
    Text: 5 4 3 2 1 SYSTEM DC/DC 42 ISL62392 INPUTS JV71- M V 5V_S5 6A Block Diagram 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 Project code: 91.4FX01.001 PCB P/N : 48.4FX01.0SA REVISION : 09242 -1 D SMSC Mobile CPU CLK GEN. SYSTEM DC/DC INPUTS 1D5V_S3(12A) 34 DDR2


    Original     		ISL62392 ICS9LPRS365B EMC2102 4FX01 TPS51124 RT9026 667/800/1066MHz 64MbX16X4 RT9018 winbond WPCE773 g547f2 GAP-CLOSE-PWR WPCE773 jv-71 ISL88731C RT8202A JV71 2204mA BT143 PDF

    BCM5784

    Abstract: JV50-TR RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL
    Text: 5 4 3 2 Project code: 91.4FN01.001 PCB P/N : 48.4FN01.001 REVISION : 09230- -1 JV50-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 35 IN OUT INPUTS HDMI LAN DY Codec A-Link 4X4 AZALIA


    Original     		JV50-TR 4FN01 667/800MHz RT8205A 638-Pin uFCPGA638 TPS51124 16X16 BCM5784 RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL PDF

    KB3310

    Abstract: RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter
    Text: 5 4 3 2 Eiger Block Diagram 3D3V_S5 23 SYSTEM DC/DC TOP 667/800MHz 667/800/1067MHz@1.05V 15 AGTL+ CPU I/F HDMI DDR Memory I/F DDR2 DIMM2 18 INTEGRATED GRAHPICS 667/800MHz LVDS, CRT I/F PCIex16 13 6,7,8,9,10,11 X4 DMI 400MHz INT.MIC 35 Line In MXM CONN 30 C-Link0


    Original     		4Z501 TPS51125 RTM875N-606-VD EMC2102 TPS51124 667/800MHz 667/800/1067MHz RT9026 KB3310 RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter PDF

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    DIODE C502

    Abstract: WPCE773LA0DG transistor K0392 RT9724GB-GP gfx E3 diode M92-LP winbond wpce773la0dg NC7SB3157P6X-1GP P8022 TPS51125
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SB REVISION : 08274-1 JM41/JM51 Discrete Block Diagram 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 D UMA LVDS UMA CRT Thermal Sensor Intel CPU CLK GEN. SMSC DIS LVDS


    Original     		JM41/JM51 4CQ01 TPS51125 EMC2103 ICS9LPRS365B RT8202 667/800/1066MHz 64Mbx16x4 512MB) DIODE C502 WPCE773LA0DG transistor K0392 RT9724GB-GP gfx E3 diode M92-LP winbond wpce773la0dg NC7SB3157P6X-1GP P8022 TPS51125 PDF

    BCM5784

    Abstract: WPCE773LA0DG TPAD1 rt8202a Wistron Corporation jv-71 RTS5159 SCD1U25V3ZY-1GP 1D05V ISL88731
    Text: 5 4 3 2 JV71 Block Diagram D Mobile CPU CLK GEN. Penryn ICS9LPRS365B 1 Project code: 91.4FX01.001 PCB P/N : 48.4FX01.0SA REVISION : 09242 -1 5V_AUX_S5 3D3V_AUX_S5 PCB STACKUP TOP L1 EMC2102 GND L2 S L3 S L4 GND L5 SYSTEM DC/DC INPUTS 34 OUTPUTS 1D05V_S0 9A


    Original     		4FX01 ISL62392 ICS9LPRS365B EMC2102 TPS51124 667/800/1066MHz 64MbX16X4 RT9026 PCIex16 BCM5784 WPCE773LA0DG TPAD1 rt8202a Wistron Corporation jv-71 RTS5159 SCD1U25V3ZY-1GP 1D05V ISL88731 PDF

    G9731

    Abstract: APW7141 BCM5784 RT8205A JV71 WPC773 jv-71 RT9025-25PSP WISTRON power sequence FDS8884
    Text: 5 4 3 2 Project code: 91.4FP01.001 PCB P/N : 48.4FP02.0SB REVISION : 09243-SB JV71-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 34 IN OUT INPUTS HDMI VDDR3 21 DCBATOUT 1D2V_S0(4A)


    Original     		JV71-TR 4FP01 4FP02 09243-SB 667/800MHz RT8205A 638-Pin uFCPGA638 TPS51124 G9731 APW7141 BCM5784 RT8205A JV71 WPC773 jv-71 RT9025-25PSP WISTRON power sequence FDS8884 PDF