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    2SA1150 Search Results

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    2SA1150 Price and Stock

    3M Interconnect 1U30A-MB2-SA1-150

    USB3 VISION INDUSTRIAL CAMERA
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    DigiKey 1U30A-MB2-SA1-150 Bulk 55 1
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    Mouser Electronics 1U30A-MB2-SA1-150
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    3M Interconnect 1U30S-MB2-SA1-150

    USB3 CABLE ASSEMBLY 1.5 METER
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    DigiKey 1U30S-MB2-SA1-150 Box 36 1
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    Mouser Electronics 1U30S-MB2-SA1-150 46
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    Interstate Connecting Components 1U30S-MB2-SA1-150 6
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    3M Interconnect 1U30A-MB2-SA1-150-CE

    USB3 VISON INDUSTRIAL CAMERA CAB
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    DigiKey 1U30A-MB2-SA1-150-CE Bulk 20 1
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    Avnet Americas 1U30A-MB2-SA1-150-CE Bulk 25 Weeks, 1 Days 25
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    3M 1U30S-MB2-SA1-150 (ALTERNATE: 04550309217204)

    Cable, Plug to Plug, USB micro B to USB Standard A, Black, 1.5 Meters | 3M 1U30S-MB2-SA1-150
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    RS 1U30S-MB2-SA1-150 (ALTERNATE: 04550309217204) Bulk 106 Weeks 25
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    3M Interconnect 7010684086

    USB Cables / IEEE 1394 Cables USB3 VISON CAMERA CBL ASSY
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    TTI 7010684086 Bulk 50 1
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    Find more 2SA1150 price and stock on Findchips.com

    2SA1150 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1150 Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-4E1A) Original PDF
    2SA1150 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1150 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1150 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1150 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1150 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1150 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1150 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1150 Unknown Cross Reference Datasheet Scan PDF
    2SA1150 Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SA1150 Toshiba TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) Scan PDF
    2SA1150 Toshiba PNP transistor Scan PDF
    2SA1150 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SA1150O Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-4E1A) Original PDF
    2SA1150-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1150Y Toshiba TRANS GP BJT PNP 30V 0.8A 3(2-4E1A) Original PDF
    2SA1150-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA1150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SA1150 2SC2710 2SA1150 2SC2710

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    Untitled

    Abstract: No abstract text available
    Text: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1150Y Freq120M

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    Untitled

    Abstract: No abstract text available
    Text: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1150O Freq120M

    2SA1150

    Abstract: 2SA115 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SA115 2SC2710

    2SA1150

    Abstract: No abstract text available
    Text: 2SA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1150 Freq120M

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    2SC2710

    Abstract: 2SA115 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA115 2SA1150

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    N1H1

    Abstract: No abstract text available
    Text: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SA1150 2SC2710. 55MAX. N1H1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150

    A1150 transistor

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
    Text: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		PDF 2SA1150 2SC2710. 55MAX. A1150 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150

    2SC2710

    Abstract: 2SA1150 C1602
    Text: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150 55MAX. 2SC2710 C1602

    A1150 transistor

    Abstract: 2SA1150 2SC2710 A1150
    Text: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1150 2SC2710. A1150 transistor 2SA1150 2SC2710 A1150

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS n r ? MT 7 m i n m w FOR AUDIO AMPLIFIER APPLICATIONS • High DC C urrent Gain : • Complementary to 2SA1150 U nit in mm 4.2MAX. hjr>E(l)-100~320 0.55MAX. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2710 2SA1150 55MAX.

    Untitled

    Abstract: No abstract text available
    Text: 2SA1150 TOSHIBA 2 S A 1 1 50 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . • • High hpE : hFE = 100~320 Complementary to 2SC2710. 0 .5 5 M A X - M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1150 2SC2710.

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


    OCR Scan     		PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C