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    2SA1242 Search Results

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    2SA1242 Price and Stock

    Toshiba America Electronic Components 2SA1242-Y(Q)

    TRANS PNP 20V 5A PW-MOLD
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    DigiKey 2SA1242-Y(Q) Tube 200
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    Toshiba America Electronic Components 2SA1242Y

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    Bristol Electronics 2SA1242Y 954
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    Quest Components 2SA1242Y 763
    • 1 $1.9
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    2SA1242Y 53
    • 1 $1.65
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    Toshiba America Electronic Components 2SA1242-Y

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    Bristol Electronics 2SA1242-Y 67
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    Others 2SA1242

    TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-251AA
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    Quest Components 2SA1242 2
    • 1 $5.85
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    2SA1242 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1242 Toshiba PNP transistor Original PDF
    2SA1242 Toshiba TRANS GP BJT PNP 20V 5A 3(2-7B1A) Original PDF
    2SA1242 Various Russian Datasheets Silicon PNP Transistor Original PDF
    2SA1242 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1242 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1242 Unknown Silicon PNP Transistor Scan PDF
    2SA1242 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1242 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1242 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1242 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1242 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1242 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1242 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1242 Toshiba Silicon PNP transistor for strobe flash and medium power amplifier applications Scan PDF
    2SA1242 Toshiba Silicon PNP Transistor Scan PDF
    2SA1242(2-7B1A) Toshiba 2SA1242 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1242(2-7B2A) Toshiba 2SA1242 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1242(2-7J1A) Toshiba 2SA1242 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1242O Toshiba TRANS GP BJT PNP 20V 5A 3(2-7B1A) Original PDF
    2SA1242-O Toshiba 2SA1242 - TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SA1242 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1242

    Abstract: A1242
    Text: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 20070701-JA 2SA1242 A1242

    A1242

    Abstract: 2SA1242 transistor A1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 A1242 2SA1242 transistor A1242

    transistor A1242

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 transistor A1242 TOSHIBA Transistor Silicon PNP Epitaxial Type Ft

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-252 FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)


    Original     		PDF O-252 2SA1242 O-252 -100uA,

    2SA1242

    Abstract: A1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 2SA1242 A1242

    transistor A1242

    Abstract: 2SA1242 A1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 transistor A1242 2SA1242 A1242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 O-251/TO-252-2L O-251 O-252-2L -100uA,

    A1242

    Abstract: 2SA1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Unit: mm Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 A1242 2SA1242

    A1242

    Abstract: 2SA1242
    Text: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 A1242 2SA1242

    2SA1242

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE linearity 123 1 123 1. BASE : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)


    Original     		PDF O-251/252 2SA1242 O-251 O-252-2L -100uA, 2SA1242

    2SA1242

    Abstract: A1242
    Text: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 2SA1242 A1242

    transistor A1242

    Abstract: 2SA1242 A1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 transistor A1242 2SA1242 A1242

    transistor A1242

    Abstract: 2SA1242 A1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 transistor A1242 2SA1242 A1242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. 0.6 ±0.15 0,95MAX q t q 0.6 M AX 5.210.2, J hFE = 100-320 (VCe = - 2 V , IC = -0 .5 A ) hjrE = 70 (Min.) (VCE= - 2 V , 1 = - 4 A)


    OCR Scan     		PDF 2SA1242 WIDTH-10ms

    SA1242

    Abstract: 2SA1242
    Text: 2SA1242 TOSHIBA 2 S A 1 242 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • hFE = 100-320 (Vce = —2 V, IC = -0 .5 A) hFE = 70 (Min.) (VCE = —2 V, IC = - 4 A) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242 SA1242 2SA1242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 TO SHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS M E D IU M POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vce = -2 V , Ic = -0.5A ) hFE = 70 (Min.) (VCE = _2V , IC = -4 A ) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan     		PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    2SA1242

    Abstract: No abstract text available
    Text: 2SA1242 TO SH IBA 2 S A 1 242 T O S H IB A TRA N SIST O R STR O BE FLASH A PPLIC A TIO N S SILICON PN P E P IT A X IA L T Y PE PCT PRO CESS M E D IU M P O W E R A M P L IF IE R A PPLIC A T IO N S hFE = 100-320 (V c e = - 2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = - 2 V , IC = - 4 A )


    OCR Scan     		PDF 2SA1242 2SA1242

    2sa1229

    Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
    Text: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242


    OCR Scan     		PDF 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 2SC3116 O-126) 2SA1248 2SC3117 2sa1229 2SA1227 SA1244 2SA1224 2SC3115 2sC3L

    2SA1242

    Abstract: A1242 transistor A1242
    Text: 2SA1242 TO SH IBA 2 S A 1 242 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = —2 V, IC = -0 .5 A) hFE = 70 (Min.) (VCE = —2 V, IC = - 4 A) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242 2SA1242 A1242 transistor A1242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm STROBE FLASH APPLICATIO N S. MEDIUM POW ER AM PLIFIER APPLICATIO N S. • • • • hFE = 100~320(V cE :=-2 V , I q = —0.5A) hpE = 70(M in.)(VcE = -2 V , I c = -4 A ) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242 50x60x0

    2SA1242

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S A 1 242 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1242) Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. . • • hFE = 100-320 (Vce = —2V, IC= - 0.5A) hFE = 70 (Min.) (V ce = - 2V, 1q = - 4A)


    OCR Scan     		PDF 2SA1242 2SA1242) 2SA1242