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    2SA1430 Price and Stock

    Toshiba America Electronic Components 2SA1430-B(F)

    Bipolar Transistor (BJT)
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    Chip1Stop 2SA1430-B(F) 450
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    • 1000 $2.46
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    Toshiba America Electronic Components 2SA1430-C(F)

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SA1430-C(F) 70
    • 1 -
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    • 100 $2.14
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    2SA1430 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1430 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC3670 Original PDF
    2SA1430 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1430 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1430 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1430 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1430 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1430 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1430 Toshiba Silicon PNP transistor for strobe flash applications and medium power amplifier applications Scan PDF
    2SA1430 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1430-A Toshiba 2SA1430 - TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1430A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1430A Toshiba PNP Transistor Scan PDF
    2SA1430-B Toshiba 2SA1430 - TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1430B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1430B Toshiba PNP Transistor Scan PDF
    2SA1430-C Toshiba 2SA1430 - TRANSISTOR 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1430C Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1430C Toshiba PNP Transistor Scan PDF

    2SA1430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2-7D101A

    Abstract: 2SA1430 A1430
    Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


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    PDF 2SA1430 2-7D101A 2SA1430 A1430

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    Abstract: No abstract text available
    Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


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    PDF 2SA1430

    A1430

    Abstract: 2-7D101A 2SA1430
    Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


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    PDF 2SA1430 A1430 2-7D101A 2SA1430

    2-7D101A

    Abstract: 2SA1430 A1430
    Text: 2SA1430 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1430 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性が良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A)


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    PDF 2SA1430 2-7D101A 2SA1430 20070701-JA 2-7D101A A1430

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


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    PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2-7D101A

    Abstract: No abstract text available
    Text: 2SA1430 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm STOROBE FLASH APPLICATIONS. M ED IUM PO W ER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hpE Linearity : hj'E(l) = 140~600 (Vq e = —IV, I q = —0.5A) : hj'E( 2) = 60(M in.), 120 (Typ.) (VCE= - IV, I c = - 4 A )


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    PDF 2SA1430 --50mA 2-7D101A

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    Abstract: No abstract text available
    Text: 2SA1430 T O SH IB A 2 SA 1 4 3 0 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • 7,1MAX High DC Current Gain and Excellent hpE Linearity : h p E (l) = 140"-600 (V c e = —IV , I ç = —0.5A)


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    PDF 2SA1430 --50mA) 961001EAA2'

    2-7D101A

    Abstract: 2SA1430
    Text: 2SA1430 TO SH IBA 2 S A 1 43 0 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hjpg Linearity : hFE(l) = 140-600 (Vc e = - 1V> Ic = -0.5A )


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    PDF 2SA1430 2-7D101A 2SA1430

    2-7D101A

    Abstract: 2SA1430
    Text: 2SA1430 TOSHIBA 2 S A 1 430 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 140-600 (VCe = -1 V , IC= -0.5A)


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    PDF 2SA1430 2-7D101A 2SA1430

    2-7D101A

    Abstract: 2SA1430
    Text: 2SA1430 TO SH IBA 2 S A 1 43 0 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • 7.1 MAX High DC Current Gain and Excellent hEE Linearity : hFE(1) = 140-600 (VCE= - I V , IC= -0 .5 A )


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    PDF 2SA1430 2-7D101A 2SA1430

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2SA1410

    Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
    Text: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40


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    PDF 2SA1407 2SA1408 2SA1409 2SA1410 2SC3668 2-7D101A) 2SA1428 2SC3669 2SA1429 2-7D101A 2SA1441 HV COB 2SA1408 2SA1412 2SA1412-Z 2SA1413