2SA1621
Abstract: 2SC4210
Text: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)
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2SC4210
2SA1621
O-236MOD
SC-59
2SA1621
2SC4210
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Untitled
Abstract: No abstract text available
Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1621
2SC4210
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Untitled
Abstract: No abstract text available
Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC4210
2SA1621
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2SA1621
Abstract: 2SC4210
Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1621
2SC4210
2SA1621
2SC4210
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Untitled
Abstract: No abstract text available
Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1621
2SC4210
O-236MOD
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Untitled
Abstract: No abstract text available
Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • • Unit: mm High hFE: hFE = 100 to 320 Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1621
2SC4210
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2SA1621
Abstract: 2SC4210
Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1621
2SC4210
O-236MOD
2SA1621
2SC4210
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2SC4210
Abstract: 2SA1621
Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 · Complementary to 2SA1621 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SC4210
2SA1621
O-236MOD
25transportation
2SC4210
2SA1621
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2SA1621
Abstract: 2SC4210
Text: 2SA1621 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1621 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC4210 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)
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2SA1621
2SC4210
O-236MOD
SC-59
2SA1621
2SC4210
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2SA1621
Abstract: 2SC4210
Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC4210
2SA1621
2SA1621
2SC4210
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2SA1621
Abstract: No abstract text available
Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1621
2SC4210
2SA1621
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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SSM3J307T
Abstract: SSM3J328R SSM3J334R
Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
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200-mA
BCE0030D
SSM3J307T
SSM3J328R
SSM3J334R
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SA1621
2SC4210
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SA1673
Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Text: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668
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2SA1615
2SA1615-Z
2SA1616
2SA1617
2SA1618
2SA1619
2SC4362
SC-59
2SA1655
2SC4363
SA1673
2SA1623
2SC4387
2sa161
2SA1616
2SA1670
2SA1671
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1621 Unit in mm + 0.5 2.5 - 0.3 AUDIO POWER AMPLIFIER APPLICATIONS. • High hpE: hFE~100~320 • Complementary to C4210 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT vCB0 -35 V Collector-Emitter Voltage vCE0 -30
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2SA1621
C4210
-10mA
-100mA
-700mA
-500mA,
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2SA1621
Abstract: 2SC4210
Text: 2SC4210 TO SH IBA 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1621 + 0.5 2 . 5 - 0.3 = 100~320 + k 1-5 0.25 - ° - 15 >i I- MAXIMUM RATINGS (Ta = 25°C)
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2SC4210
2SA1621
O-236MOD
SC-59
2SA1621
2SC4210
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC4210 2SC4210 T O SH IB A TRA NSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER A PPLICATIO NS • • High DC Current Gain : Complementary to 2SA1621 U n it in m m = 100~320 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4210
2SA1621
O-236MOD
SC-59
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1621 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 6 21 U nit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 • High IrpE : ^FE = 100—320 • Complementary to 2SC4210 + 0 .2 5 1 . 5 - 0 .1 5 ivìAXi M ü ivi RATi NGS (Ta = 2 5CC)
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2SA1621
2SC4210
O-236MOD
SC-59
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sc4210
Abstract: 2SA1621 2SC4210
Text: TOSHIBA 2SC4210 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : hjpg — 100~320 Complementary to 2SA1621 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4210
SC4210
2SA1621
O-236MOD
sc4210
2SA1621
2SC4210
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2SA1621
Abstract: 2SC4210 A1621
Text: TO SHIBA 2SA1621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 621 AUDIO PO W ER AM PLIFIER APPLICATIONS Unit in mm + 0.5 2.5 - 0.3 High hpE : hpE = 100~320 • Complementary to 2SC4210 + 0.25 + 0.1 0 .4 - 0 .0 5 • i SYMBOL CHARACTERISTIC
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2SA1621
2SC4210
961001EAA2'
2SA1621
2SC4210
A1621
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2SA1621
Abstract: 2SC4210 A1621
Text: 2SA1621 TO SH IBA 2 S A 1 621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS + 0.5 • • High hpE • hpE = 100~320 Complementary to 2SC4210 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SA1621
2SC4210
O-236MOD
SC-59
2SA1621
A1621
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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