Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2
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2002/95/EC)
2SC3941
2SA1858
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2SC3941
Abstract: 2SA1858
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 ue pl d in an c se ed lud
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2002/95/EC)
2SC3941
2SA1858
2SC3941
2SA1858
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2SA1858
Abstract: 2SC3941
Text: Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2 • Features 13.5±0.5 0.7±0.2 0.7±0.1 • High collector-emitter voltage Base open VCEO
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2SC3941
2SA1858
15ues,
2SA1858
2SC3941
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1858 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 8.0±0.2 • Features M Di ain sc te on na tin nc ue e/ d • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SA1858
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2
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2002/95/EC)
2SC3941
2SA1858
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2SA1858
Abstract: No abstract text available
Text: Transistors 2SA1858 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 8.0±0.2 • Features • High collector-emitter voltage Base open VCEO Rating Unit Collector-base voltage (Emitter open) VCBO −300 V
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2SA1858
2SA1858
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2SA1858
Abstract: No abstract text available
Text: Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 High collector to emitter voltage VCEO. 0.7±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –300 V Collector to emitter voltage
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2SA1858
2SA1858
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2SA1858
Abstract: No abstract text available
Text: Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 High collector to emitter voltage VCEO. 0.7±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –300 V Collector to emitter voltage
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2SA1858
2SA1858
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IC tl 072
Abstract: 2SA1858 2SC3941
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 ue pl d in an c se ed lud
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2002/95/EC)
2SC3941
2SA1858
IC tl 072
2SA1858
2SC3941
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161 TRANSISTOR
Abstract: 2SA1858
Text: Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. 13.5±0.5 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SA1858
161 TRANSISTOR
2SA1858
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1858 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 8.0±0.2 • Features • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SA1858
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1858 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 8.0±0.2 • Features • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SA1858
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2SA1858
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1858 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 8.0±0.2 • Features ue pl d in an c
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2002/95/EC)
2SA1858
2SA1858
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 Unit: mm 8.0±0.2 M Di ain
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2002/95/EC)
2SC3941
2SA1858
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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C1360A
Abstract: 2SC4971 2SB873 2SB1615 SC1360
Text: P a c k a g e No. Applica tion S M ini T y p e Functions S S Mini Type (D1) M ini T y p e T M in i T y p e (D 1 2) (D22) (D5) New S Type (D34) VcEO T O -9 2 M Type T O -9 2 N L T O -9 2 L (D46) (D35) (D48) (D47) Mini Power Type (D19) MT1 T y p e M T 2 Type
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2SB1537
2SD2357
2SB1538
12SD2358
A2SB1611
2SD1679
2SB789/A
2SD968/A
2SB1297
2SD1937
C1360A
2SC4971
2SB873
2SB1615
SC1360
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2SB873
Abstract: 2SA879 D2483 2SC1360 2sc5018 2SD2360
Text: Package No. Application Functions fx (MHz) VcEO S-Mini Type <D5) Mini Type (D12) New S Type (D34) TO-92 (D46) M Type (D35) TO-92NL (D48) TO-92L (D47) Mini-Power Type MT1 Type (D37) MT2 Type (D38) (mA) »250 10 1A * < 0.15 *500 20 500 * <0.2 »250 20 500 * <0.2
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O-92NL
O-92L
2SB1537
2SB1538
2SD2358
2SB1539
V2SD2359
2SB1614
2SC1518
2SB1540
2SB873
2SA879
D2483
2SC1360
2sc5018
2SD2360
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2sc2188
Abstract: No abstract text available
Text: # General-use Low Frequency Amplifiers and Others continued Package (No.) IT Applica tion Functions J] UJ S S M ini Type (D 1 ) S Mini Type Mini Type T Mini Type New S Type (D19) (D 5) (D39) (D10) ru ( A2SB1610 In I A2SD2472 TO-92 (D49) M Type (D40) TO-92 NL
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S-13g
bT326S2
2sc2188
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