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    2SA2088 Price and Stock

    ROHM Semiconductor 2SA2088U3T106

    TRANS PNP 60V 0.5A UMT3
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    DigiKey 2SA2088U3T106 Digi-Reel 10,677 1
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    2SA2088U3T106 Cut Tape 10,677 1
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    2SA2088U3T106 Reel 9,000 3,000
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    Mouser Electronics 2SA2088U3T106 2,364
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    ROHM Semiconductor 2SA2088T106Q

    TRANS PNP 60V 0.5A UMT3
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    DigiKey 2SA2088T106Q Cut Tape 5,990 1
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    2SA2088T106Q Digi-Reel 5,990 1
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    Verical 2SA2088T106Q 7,132 160
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    RS 2SA2088T106Q Bulk 40
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    Quest Components 2SA2088T106Q 80
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    Chip1Stop 2SA2088T106Q Cut Tape 7,132
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    ROHM Semiconductor 2SA2088U3HZGT106Q

    TRANS PNP 60V 0.5A UMT3
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    DigiKey 2SA2088U3HZGT106Q Cut Tape 477 1
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    2SA2088U3HZGT106Q Digi-Reel 477 1
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    2SA2088U3HZGT106Q Reel 3,000
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    Mouser Electronics 2SA2088U3HZGT106Q 3,111
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    Verical 2SA2088U3HZGT106Q 3,656 307
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    2SA2088U3HZGT106Q 2,698 307
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    2SA2088U3HZGT106Q 550 132
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    Quest Components 2SA2088U3HZGT106Q 5,083
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    TTI 2SA2088U3HZGT106Q Reel 3,000
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    Avnet Silica 2SA2088U3HZGT106Q 16 Weeks 3,000
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    CoreStaff Co Ltd 2SA2088U3HZGT106Q 3,656
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    2SA2088U3HZGT106Q 2,698
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    ROHM Semiconductor 2SA2088U3T106Q

    2SA2088U3T106Q
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    Verical 2SA2088U3T106Q 2,858 234
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    2SA2088U3T106Q 1,373 295
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    Quest Components 2SA2088U3T106Q 1,098
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    CoreStaff Co Ltd 2SA2088U3T106Q 1,383
    • 1 $0.432
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    ROHM Semiconductor 2SA2088FRAT106

    Transistor, Aec-Q101, Pnp, -60V, Sot-323; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-60V; Transition Frequency Ft:400Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:-500Ma; Dc Current Gain Hfe:120Hfe; Rohs Compliant: Yes |Rohm 2SA2088FRAT106
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    Newark 2SA2088FRAT106 Cut Tape 420 5
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    2SA2088 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2088 ROHM Medium power transistor (-60V, -0.5A) Original PDF
    2SA2088 ROHM Medium power transistor (-60V, -0.5A) Original PDF
    2SA2088T106 ROHM Medium Power Transistor (-60 V, -0.5 A) Original PDF
    2SA2088T106Q ROHM High speed switching Transistor; Package: UMT3; Constitution materials list: Packing style: taping; Package quantity: 3000; Original PDF
    2SA2088T106R ROHM TRANS PNP 60V 0.5A SOT-323 TR Original PDF
    2SA2088U3T106 Rohm Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 2SA2088U3 IS THE HIGH SPEED SWIT Original PDF

    2SA2088 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2V1000

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SA2088 Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.


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    PDF 2SA2088 500mA) 150mV 100mA, 2SC5876 R1120A 2V1000

    2SA20

    Abstract: 2SA2088 2SC5876 T106
    Text: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 (1) 0.65 0.65 1.3 0.15 0.1Min. (2) 2.1 (3) 1.25 zFeatures 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically


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    PDF 2SA2088 -500mA) -150mV -100mA, -10mA) 2SC5876 2SA20 2SA2088 2SC5876 T106

    Untitled

    Abstract: No abstract text available
    Text: AEC-Q101 Qualified Medium power transistor 60V, 0.5A 2SA2088FRA Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


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    PDF AEC-Q101 2SA2088FRA 500mA) 150mV 100mA, 2SC5876FRA 2SC5876 R1120A

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)


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    PDF 2SA2088 SC-70) OT-323> -500mA) -150mV -100mA, -10mA) 2SC5876 2SA2088 2SC5876 T106

    NE 555 datasheet

    Abstract: 2SA2088 Q2SA2088 pdf 555
    Text: SPICE PARAMETER 2SA2088 by ROHM TR Div. * 2SA2088 PNP BJT model * Date: 2006/12/15 .MODEL 2SA2088 PNP + IS=65.000E-15 + BF=249.50 + VAF=100 + IKF=.69106 + ISE=65.001E-15 + NE=1.4594 + BR=10.162 + VAR=100 + IKR=11.394 + ISC=5.0270E-12 + NC=1.3515 + NK=.79748


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    PDF 2SA2088 Q2SA2088 000E-15 001E-15 0270E-12 030E-12 647E-12 61E-12 022E-9 NE 555 datasheet 2SA2088 pdf 555

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)


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    PDF 2SA2088 SC-70) OT-323> -500mA) -150mV -100mA, -10mA) 2SC5876 2SA2088 2SC5876 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SA2088 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.


    Original
    PDF 2SA2088 500mA) 150mV 100mA, 2SC5876 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SA2088 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.


    Original
    PDF 2SA2088 500mA) 150mV 100mA, 2SC5876 R1120A

    2SA2088

    Abstract: 2SC5876 T106
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A 2SA2088 2SC5876 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


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    PDF AEC-Q101 2SC5876FRA 500mA) 150mV 100mA, 2SA2088FRA 2SA2088 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


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    PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


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    PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


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    PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SA2088 2SC5876 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) 0.3 (3) (2) UMT3 0.65 0.65 Dimensions (Unit : mm) 0.7 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


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    PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


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    PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


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    PDF R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


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    PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original
    PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    2SA1576UB

    Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
    Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.


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    PDF R0039A 51P6029E 2SA1576UB 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703

    2SC5876

    Abstract: 2SA20 2SA2088 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


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    PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SC5876 2SA20 2SA2088 T106