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    2SA2089S Search Results

    2SA2089S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2089S ROHM Medium power transistor (-60V, -0.5A) Original PDF

    2SA2089S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA2089S

    Abstract: 2SC5877S SC-72
    Text: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)


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    2SA2089S SC-72) 15Min. -500mA) -150mV -100mA, -10mA) 2SC5877S A2089S 2SA2089S 2SC5877S SC-72 PDF

    2SA20

    Abstract: 2SA2089S 2SC5877S SC-72 A2089
    Text: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)


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    2SA2089S SC-72) 15Min. -500mA) -150mV -100mA, -10mA) 2SC5877S A2089S 2SA20 2SA2089S 2SC5877S SC-72 A2089 PDF

    2SA2089S

    Abstract: 2SC5877S C5877
    Text: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


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    2SC5877S 500mA) 150mV 100mA, 2SA2089S 15Min. C5877S 2SA2089S 2SC5877S C5877 PDF

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


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    O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 PDF

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


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    200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982 PDF

    2SA20

    Abstract: 2SA2089S 2SC5877S
    Text: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


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    2SC5877S 500mA) 150mV 100mA, 2SA2089S 15Min. C5877S 2SA20 2SA2089S 2SC5877S PDF