2SA2089S
Abstract: 2SC5877S SC-72
Text: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)
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2SA2089S
SC-72)
15Min.
-500mA)
-150mV
-100mA,
-10mA)
2SC5877S
A2089S
2SA2089S
2SC5877S
SC-72
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2SA20
Abstract: 2SA2089S 2SC5877S SC-72 A2089
Text: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)
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2SA2089S
SC-72)
15Min.
-500mA)
-150mV
-100mA,
-10mA)
2SC5877S
A2089S
2SA20
2SA2089S
2SC5877S
SC-72
A2089
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2SA2089S
Abstract: 2SC5877S C5877
Text: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and
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2SC5877S
500mA)
150mV
100mA,
2SA2089S
15Min.
C5877S
2SA2089S
2SC5877S
C5877
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mW
500mW
15Min.
85Max.
15Max.
2sc5922
2SC5734
2SC5917
2SC5989
2SA2054
2sc5919
2SC5987
2SC5734K
2SC5918
2SC5982
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2SA20
Abstract: 2SA2089S 2SC5877S
Text: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and
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2SC5877S
500mA)
150mV
100mA,
2SA2089S
15Min.
C5877S
2SA20
2SA2089S
2SC5877S
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