Contextual Info: HITACHI 2SB1061-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um R atings Ta = 25°C Item Symbol Rating Unit Collector to base voltage Vcso -300 V Collector to emitter voltage Vceo -300 V Emitter to base voltage

Contextual Info: 2SB1061 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B i •■ M[ |[ W1 1 2 1. Base 2. C ollector Flange 3. Emitter 55 kQ (Typ) Absolute Maximum Ratings (Ta 25°C) = Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SB1061 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B l ì • I 1. Base 2. C ollector Flange 3. Emitter 1 2 55 k£2 (Typ) Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings Unit Collector to base voltage

2SB1061

Contextual Info: HITACHI 2SB1061-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCeo -3 0 0 V Collector to emitter voltage VCE0 -3 0 0 V Emitter to base voltage

2SB1039

Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
Contextual Info: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063

Hitachi DSA001650

Contextual Info: 2SB1061 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter 55 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage VCBO –300

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

KY2 transistor

Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.

transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SB1013

Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041
Contextual Info: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367

kyl 1020

Abstract: Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 MSA4709A
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line Interface Circuit G EN ER A L DESCRIPTIO N The MSA4709A is designed to pro v id e BSH functions a n d to m eet PABX transm ission perform ance requirem ents. T his device can replace the h y b rid tran sfo rm et circuit.

IVD12

Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100
Contextual Info: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES