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    2SB1254 Search Results

    2SB1254 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1254 Panasonic TRANS DARLINGTON PNP 140V 7A 3TOP-3F-A1 Original PDF
    2SB1254 Panasonic PNP Transistor Darlington Original PDF
    2SB1254 Panasonic Silicon PNP epitaxial planar type Darlington Original PDF
    2SB1254 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1254 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1254 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1254 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1254P Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF
    2SB1254Q Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF
    2SB1254S Panasonic Silicon PNP Epitaxial Planar Type Darlington Power Transistor Original PDF

    2SB1254 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1254

    Abstract: 2SD1894
    Text: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS


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    PDF 2SD1894 2SB1254 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE


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    PDF 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: JMnic Product Specification 2SB1254 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SD1894 APPLICATIONS ・Power amplification


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    PDF 2SB1254 2SD1894 -160V; -140V; 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: SavantIC Semiconductor Product Specification 2SB1254 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Optimum for 60W HiFi output ·High foward current transfer ratio ·Low collector saturation voltage ·Complement to type 2SD1894 APPLICATIONS


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    PDF 2SB1254 2SD1894 -160V; -140V; 2SB1254 2SD1894

    2SD1894

    Abstract: 2SB1254
    Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


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    PDF 2SD1894 2SB1254 2SD1894 2SB1254

    2SB1254

    Abstract: 2SD1894
    Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


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    PDF 2SD1894 2SB1254 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE


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    PDF 2SD1894 2SB1254

    2SB1254

    Abstract: 2SD1894
    Text: Inchange Semiconductor Product Specification 2SB1254 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SD1894


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    PDF 2SB1254 2SD1894 Collec40V; 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE sat : < –2.5V


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    PDF 2SB1254 2SD1894 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 Unit: mm ● ● 0.7 Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE sat : < –2.5V


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    PDF 2SB1254 2SD1894 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: 2SB1254P Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)7 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)160 h(FE) Min. Current gain.8k


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    PDF 2SB1254P Freq20MÃ

    2SD1894

    Abstract: 2SB1254
    Text: SavantIC Semiconductor Product Specification 2SD1894 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1254 APPLICATIONS ·Power amplification ·Optimum for 60W high-fidelity


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    PDF 2SD1894 2SB1254 2SD1894 2SB1254

    2SB1254

    Abstract: 2SD1894
    Text: Inchange Semiconductor Product Specification 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS ・Power amplification ・Optimum for 60W high-fidelity


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    PDF 2SD1894 2SB1254 2SB1254 2SD1894

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C


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    PDF 2002/95/EC) 2SD1894 2SB1254

    2SB1254

    Abstract: 2SD1894
    Text: Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter


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    PDF 2SD1894 2SB1254 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1894 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1254 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5)


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    PDF 2002/95/EC) 2SD1894 2SB1254 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 0.7 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE


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    PDF 2SB1254 2SD1894 2SB1254 2SD1894

    2SB1254

    Abstract: 2SD1894
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS


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    PDF 2SD1894 -160V; -140V; 2SB1254 2SD1894

    T0220

    Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254


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    PDF BC516 BCV26 MPSA64 BDX47 T0126 BSP61 OT223 TIP117 T0220 BD678 T0220 BDT62C 2SB1647 BD680 T0-220

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1894 2SD1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 Unit .’ mm tO 4 -r • O ptim um fo r 60W hi-fi o u tp u t • H igh D C c u r re n t gain Iife : 5000~30000


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    PDF 2SD1894 2SB1254

    2SB1254

    Abstract: 2SD1894 RB1000
    Text: Power Transistors 2SD1894 2S D 1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 U n it .'m m 5 2max. ^3.2 . 15.5m ax. . • Features 6.9mm. *1 • Optimum for 60 W hi-fi output • High DC cu rre n t gain


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    PDF 2SD1894 2SB1254 bT326SE 32flS2 2SB1254 2SD1894 RB1000

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1254 2SB1254 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Unit m Power Amplifier Complementary Pair with 2SD 1894 15 .5 max. 5 2max 1- /3 ,2 6.9m m . • Features • • • • Optimum for 60W hi-fi output


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    PDF 2SB1254 10Vxo

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    pnp 222A

    Abstract: 2SB1154 2SB1254 2SD1705
    Text: Power Transistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Power Switching Complementary Pair with 2S D 1705 Package Dimensions . - U n it : mm 5.2m ax. . 15.5m ax. • Features s “ ^ 3 .2 6.9m in. I- • Low collector-eim itter saturation voltage VcEtsatj


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    PDF 2SB1154 2SD1705 2SB1254) pnp 222A 2SB1154 2SB1254 2SD1705