2SB1347
Abstract: 2SD2029
Text: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier
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2SB1347
2SD2029
-160V;
-20mA
2SB1347
2SD2029
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V
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2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2SD2029
2SB1347
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V
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2SD2029
2SB1347
2SB1347
2SD2029
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160
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2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB1347
2SD2029
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE
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2SB1347
2SD2029
2SB1347
2SD2029
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2SD2029
Abstract: 2SB1347
Text: SavantIC Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications
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2SD2029
2SB1347
2SD2029
2SB1347
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2SB1347
Abstract: 2SD2029
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 APPLICATIONS ·Power amplifier applications
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2SB1347
-160V
2SD2029
-160V;
-20mA;
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE
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2SD2029
2SB1347
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SB1347
2SD2029
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SD2029
2SB1347
700mA
600mA
500mA
400mA
2SB1347
2SD2029
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Untitled
Abstract: No abstract text available
Text: 2SB1347 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)12 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)160 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)8
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2SB1347
Freq15MÃ
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Untitled
Abstract: No abstract text available
Text: , One, TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1347 • Features • Satisfactory foward current transfer ratio hFE collector current Ic
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2SD2029
2SB1347
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V
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2SD2029
2SB1347
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SB1347
2SD2029
2SB1347
2SD2029
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SB1347
Abstract: 2SD2029 SS 109
Text: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)
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2SB1347
2SD2029
G01b2Tb
2SB1347
2SD2029
SS 109
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB1347 2SB1347 Sipcon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2029 •Features • V ery good linearity of DC c u rre n t gain • Wide area of safety operation ASO Package Dimensions U nit : mm
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2SB1347
2SD2029
bT32fiS2
32flS5
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SA1302 TOSHIBA
Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
Text: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776
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2SB1267
2SB937A
2SB1165
2SB933
2SB817
2SB863
2SA1227A
2SA1302
2SB1371
2SB776
2SA1302 TOSHIBA
2SA1302
Toshiba 2Sa1302
SB 1156
2SB1371
mitsubishi 1183
2SB1407
2SB1201
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en220
Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Text: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^
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2sb1203
2SA1244
2SB933
2SB1204
2SB952
2SB945
2SB1294
2SB1018
2SB946
2SA145Z
en220
DTA143ES
2SA1441
1658 NEC
2sa 1659
RT1P431S
2sa1265n
2SB1188
2SB1371
2SA1659
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