Contextual Info: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage

2SD2053

Abstract: 2SB1362 ic 4001
Contextual Info: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Symbol Ratings Unit 150 V 150 V Collector to base voltage VCBO VCEO Emitter to base voltage

2SB1362

Abstract: 2SD2053
Contextual Info: Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

2SB1362

Abstract: 2SD2053
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 APPLICATIONS ·Designed for high power amplifications.

2SB1362

Abstract: 2SD2053
Contextual Info: SavantIC Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base

2SD2053

Abstract: 2SB1362
Contextual Info: SavantIC Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base

2sd2053

Abstract: 2SB1362
Contextual Info: Inchange Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD2053 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: Power T ransistors 2SD2053 2SD2053 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1362 • Features • High breakdow n voltage: V ceo= 1 5 0 V • Good linearity of DC c u rre n t gain I i f e

2SB1362

Abstract: 2SD2053
Contextual Info: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Ratings Unit –150 V –150 V VCBO VCEO Emitter to base voltage VEBO Peak collector current

2SD2053

Abstract: 2SB1362
Contextual Info: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 Unit: mm 15.0±0.5 Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage

Contextual Info: Power Transistors 2SB1362 2SB1362 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SD 2052 ■ Features • V e ry g o o d lin e a rity of DC c u r r e n t gain F ife • W ide a r e a o f s a fe ty o p e ra tio n (ASO)

2SB1362

Abstract: 2SD2053
Contextual Info: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage

Contextual Info: 2SB1362 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)9 Absolute Max. Power Diss. (W)2.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)7

2SB1362

Abstract: 2SD2052
Contextual Info: Power Transistors 2SB1362 2SB1362 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • Very good linearity of DC current gain Fife • Wide area of safety operation (ASO) • High transition frequency (fr)

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Contextual Info: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3