2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of
|
Original
|
PDF
|
2SD2216L
2SB1462L
2SB1462L
2SD2216L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 0.30±0.03 Parameter Symbol Rating Unit Collector-base voltage Emitter open
|
Original
|
PDF
|
2SB1462L
2SD2216L
2SB1462L
2SD2216L
|
Untitled
Abstract: No abstract text available
Text: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open
|
Original
|
PDF
|
2SD2216L
2SB1462L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 1.00±0.05 Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
|
Original
|
PDF
|
2SB1462L
2SD2216L
2SB1462L
2SD2216L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 0.20±0.03 1.00±0.05 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open
|
Original
|
PDF
|
2SD2216L
2SB1462L
2SB1462L
2SD2216L
|
Untitled
Abstract: No abstract text available
Text: 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
|
Original
|
PDF
|
2SD2216L
2SB1462L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.020±0.010 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of
|
Original
|
PDF
|
2SB1462L
2SD2216L
2SB1462L
2SD2216L
|
Untitled
Abstract: No abstract text available
Text: 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.035±0.005 2 0.80±0.05 3 1 4 0.60±0.05 1.00±0.05 • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
|
Original
|
PDF
|
2SB1462L
2SD2216L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open
|
Original
|
PDF
|
2SD2216L
2SB1462L
2SB1462L
2SD2216L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.020±0.010 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of
|
Original
|
PDF
|
2SB1462L
2SD2216L
2SB1462L
2SD2216L
|
2SB1462L
Abstract: 2SD2216L
Text: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of
|
Original
|
PDF
|
2SD2216L
2SB1462L
2SB1462L
2SD2216L
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
Untitled
Abstract: No abstract text available
Text: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for
|
Original
|
PDF
|
1008-type
1/10th
2SB1462L
2SD2216L
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
E00081BE
|
1008 transistor
Abstract: No abstract text available
Text: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed
|
OCR Scan
|
PDF
|
1008-type
l/10th
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
D00081BE
1008 transistor
|
