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    2SB709A Price and Stock

    Panduit Corp 2SB709A-TX

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    Bristol Electronics 2SB709A-TX 8,033
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    Panasonic Electronic Components 2SB709A-(TX)

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    Bristol Electronics 2SB709A-(TX) 3,000 23
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    Quest Components 2SB709A-(TX) 2,400
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    Panduit Corp 2SB709A-RTW

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    Bristol Electronics 2SB709A-RTW 3,000
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    Panasonic Electronic Components 2SB709AR

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    Bristol Electronics 2SB709AR 1,100
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    Panasonic Electronic Components 2SB709A-TX

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    Quest Components 2SB709A-TX 11,838
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    2SB709A-TX 6,426
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    Find more 2SB709A price and stock on Findchips.com

    2SB709A Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB709A Kexin Silicon PNP Epitaxial Planer Type Original PDF
    2SB709A Panasonic Silicon PNP Transistor Original PDF
    2SB709A Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB709A Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB709A TY Semiconductor Silicon PNP Epitaxial Planer Type - SOT-23 Original PDF
    2SB709A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB709A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB709A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB709A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB709A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB709A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB709A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB709A Panasonic Si PNP epitaxial planar. General amplifier. Scan PDF

    2SB709A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB709A

    Abstract: marking Bq sot23 hFE CLASSIFICATION Marking MARKING BQ marking BS SOT-23
    Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB709A OT-23 2SB709A marking Bq sot23 hFE CLASSIFICATION Marking MARKING BQ marking BS SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB709A OT-23

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A

    transistor MAR 543

    Abstract: 2SB709A 2SD0601A 2SD601A 2SB0709A
    Text: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 ñ0.05 • Features 5° 0.4±0.2 2.8+0.2 -0.3 1.50+0.25 -0.05 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SD0601A 2SD601A) 2SB0709A 2SB709A) transistor MAR 543 2SB709A 2SD0601A 2SD601A 2SB0709A

    marking BR

    Abstract: 2SB709A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.2 A ICM: Collector-base voltage


    Original     		PDF OT-23 2SB709A OT-23 -10mA 200MHz marking BR 2SB709A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) 2SD0601A 2SD601A) 2SB0709A 2SB709A)

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
    Text: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1


    Original     		PDF XP04601 XP4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB709A 2SD601A XP04601 XP4601

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SD0601A 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm +0.2 2.8 –0.3 Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


    Original     		PDF 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB0709A 2SB709A 2SD0601A 2SD601A

    sot 23 transistor

    Abstract: No abstract text available
    Text: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SB709A OT-23 OT-23 2SD601A -10mA 200MHz sot 23 transistor

    2SB0709A

    Abstract: 2SB709A 2SC2404 XN04683 XN4683
    Text: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 3 2 0.50+0.10 –0.05 • 2SC2404 + 2SB0709A (2SB709A) Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)


    Original     		PDF XN04683 XN4683) 2SC2404 2SB0709A 2SB709A) 2SB0709A 2SB709A 2SC2404 XN04683 XN4683

    2SB709A

    Abstract: 2SD601A XP1B301
    Text: Composite Transistors XP1B301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element ■ Absolute Maximum Ratings


    Original     		PDF XP1B301 2SB709A 2SD601A 2SD601A XP1B301

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
    Text: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter Tr2 1.1+0.2 –0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)


    Original     		PDF XN05601 XN5601) 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB709A 2SD601A XN05601 XN5601

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
    Text: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)


    Original     		PDF XN04601 XN4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB709A 2SD601A XN04601 XN4601

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT—23 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter １．０ Power dissipation PCM : 0.2


    Original     		PDF OT-23 2SB709A 037TPY 950TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25


    Original     		PDF 2002/95/EC) 2SB0709A 2SB709A) 2SD0601A 2SD601A)

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage


    Original     		PDF 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A

    2SB0709A

    Abstract: 2SB709A XN01401 XN1401
    Text: Composite Transistors XN01401 XN1401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SB0709A(2SB709A) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01401 XN1401) 2SB0709A 2SB709A) 2SB709A XN01401 XN1401

    2SB0709A

    Abstract: 2SB709A XP04401 XP4401
    Text: Composite Transistors XP04401 XP4401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SB0709A(2SB709A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP04401 XP4401) 2SB0709A 2SB709A) 2SB709A XP04401 XP4401

    XP06401

    Abstract: 2SB0709A 2SB709A XP6401
    Text: Composite Transistors XP06401 XP6401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 4 0 to 0.1 2SB0709A(2SB709A) x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP06401 XP6401) 2SB0709A 2SB709A) XP06401 2SB709A XP6401

    2SB709A

    Abstract: 2SD601A XP1C301
    Text: Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● • Absolute Maximum Ratings Parameter (Ta=25˚C)


    Original     		PDF XP1C301 2SB709A 2SD601A 2SD601A XP1C301

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
    Text: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SD0601A (2SD601A) + 2SB0709A (2SB709A)


    Original     		PDF XN04601 XN4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB0709A 2SB709A 2SD0601A 2SD601A XN04601 XN4601

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN0B301 XN1B301
    Text: Composite Transistors XN0B301 XN1B301 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 1.50+0.25 –0.05 2 1 10˚ 1.1+0.2 –0.1 • 2SB0709A (2SB709A) + 2SD0601A (2SD601A) Parameter


    Original     		PDF XN0B301 XN1B301) 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A XN0B301 XN1B301

    XP2401

    Abstract: 2SB709A
    Text: Composite Transistors XP2401 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original     		PDF XP2401 2SB709A 100Hz 10kHz 270Hz XP2401 2SB709A

    2SD2458

    Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
    Text: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type


    OCR Scan     		PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2436 2SD2434 2SB1600 2SB642 2SD2433 2SD1010 2sB774 transistor HOA1404-2