2SB858 Search Results

Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c teo ^CBO (V) Min ^CEO ^EBO (V) Min (V) Min 2SB858C 70 60 5 40 4 1 2SB858D 70 60 5 40 4 1 BD240 55 45 5 30 2 200

2sb857

Abstract: 2sb858
Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline T 0-2 2 0 A B f V vl 1. Base 2. Collector Flange 3. Em itter •| 2 .3 Absolute Maximum Ratings (Ta = 25°C)

2SB858

Abstract: 2SB857 2SD1133 2SD1134 DSA003644
Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused ADE-208-859 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C)

2SB857

Abstract: 2SB858
Contextual Info: JMnic Product Specification 2SB857 2SB858 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1133/1134 APPLICATIONS ・Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

2sb857

Abstract: 2SB858 2sb858 datasheet
Contextual Info: SavantIC Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD1133/1134 · APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

BD95280

Abstract: bd950 2SB858C 2SB858D BD240 BD240A BD240B BD240C BD242 BD242A
Contextual Info: TO-220 Power Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) P0 ^CBO V(B e (v) 'c e s ^CE (ma) Max e (V) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SB858C 70 60 5 40 4 1 2SB858D 70 60 5 40

D1133

Contextual Info: 2SD1133, 2SD1134 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline T 0 -2 2 0 A B 1. B a se 2. C o lle c to r F la n g e 2 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C)

Hitachi DSA001650

Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857

2SB857

Abstract: 2SB858 2SD1133 2SD1134 DSA003792
Contextual Info: 2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1133

Hitachi DSA00279

Contextual Info: 2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1133

2SB857

Abstract: 2SB858 2SD1133 2SD1134
Contextual Info: HITACHI 2 SD1 1 3 3 , 2 SD1 1 3 4 SILICON NPN TRIPLE DIFFUSED LOW FREQ U EN C Y PO W ER AM PLIFIER COMPLEMENTARY PAIR WITH 2SB857 AND 2SB858 T1 1 1 - 3 i ' 4 ' 1 i .r » .* . O.M i Hi Z 1.27 ~ l.O im x. t fl . H .isc It _ 1 2. C o llecto r Ululaci 7.8 iU ,S

2SB858

Contextual Info: HITACHI 2SB857, 2SB858 S IL IC O N P N P T R I P L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P L E M E N T A R Y P A IR W IT H 2SD 1133 A N D 2 S D 1 134 !- Be« 2 C o lle e n * tí'Usyt i } I-m a te r i,D in c íís U )n » i n l i m i)

Hitachi DSA00164

Contextual Info: 2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1133

Hitachi DSA002787

Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857

Contextual Info: 2SD1133, 2SD1134 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline T 0 -2 2 0 A B 1. B a s e 2. C o lle c to r F la n g e 2 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C)

2SB857

Abstract: 2SB858 2SD1133 2SD1134 Hitachi DSA00333
Contextual Info: 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB857

2SD1133

Abstract: 2SD1134 2SB857 2SB858 DSA003645
Contextual Info: 2SD1133, 2SD1134 Silicon NPN Triple Diffused ADE-208-905 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C)

B0242C

Abstract: 2SB858C(E)
Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type Nc. 2SB858C V , Bt V CEFC (V) Win (V) Min P, (W ) (V) Mm @Tc~25"c 70 60 5 40 lc (A) 4 ^CBO ¡PA) Max 1 e (V) ‘ct(mA| Wax 'c& (A)

2SB858

Abstract: 2SD1134
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB858 DESCRIPTION •Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1134

2SB857

Abstract: 2SB858
Contextual Info: Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1133/1134 APPLICATIONS ・Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SA614

Abstract: 2N6107 2N6109 2N6111 2SA614R 2SA614Y 2SA748 2SA748P 2SA748Q 2SA748R
Contextual Info: TO-220 Power Package Transistors PNP Maximum Ratings Type No. V C BO ^CEO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) PD (W) (V) Min @Tc=25°c ^EBO 'cBO ^FE @ Min Max 75 30 2.3 150 * 100 60 * 100 40 'ces (V) Min 2N6107 80 70 5 40 7