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    2SB929 Search Results

    2SB929 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB929 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB929 Panasonic PNP Transistor Original PDF
    2SB929 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB929 TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB929 Unknown Cross Reference Datasheet Scan PDF
    2SB929 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB929 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB929 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB929 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB929A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB929A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB929A) Panasonic PNP Transistor Original PDF
    2SB929A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB929A Unknown Cross Reference Datasheet Scan PDF
    2SB929A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB929A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB929A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB929A Panasonic Silicon Medium Power Transistors Scan PDF

    2SB929 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB929 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .


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    PDF 2SB929 O-252

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature


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    PDF 2SB929, 2SB929A 2SB929 2SB929 2SB929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit


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    PDF 2002/95/EC) 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature


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    PDF 2SB0929, 2SB0929A 2SB929, 2SB929A) 2SB0929 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .


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    PDF 2SB929A O-252

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage


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    PDF 2SD1252, 2SD1252A 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB929A

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SB929A O-252 2SB929A

    2SB929

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB929 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15


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    PDF 2SB929 O-252 2SB929

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A


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    PDF 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB929 and 2SB929A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 6 V Peak collector current ICP


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    PDF 2SD1252, 2SD1252A 2SB929 2SB929A 2SD1252 2SD1252 10MHz 2SB929A 2SD1252A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


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    PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)


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    PDF 2SB929, 2SB929A 2SD1252A 2SB929 2SB929A

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: Power T ransistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1252, 2SD1252A • Features . • High DC current gain lire and good linearity ' • Low collector-emitter saturation voltage ( V Cec« .o )


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    PDF 2SB929, 2SB929A 2SD1252, 2SD1252A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: 2SD1252, 2SD1252A Power Transistors 2S D 1252, 2S D 1252A Silicon N P N T rip le -D iffu s e d P la n a r Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB929, 2SB929A U n it ! mn 3.7max, • Features 8.7 n • H igh DC c u rre n t gain


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    PDF 2SD1252, 2SD1252A 2SB929, 2SB929A 2SD1252 2SB929 2SB929A 2SD1252A

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


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    PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB952, 2SB952A 2SB952, 2SB952A Silicon PNP Epitaxial Planar Type Package Dimensions Unit ! mm Low Voltage Switching •i Features 3.7max. l.lmr—ax.* 8.? max. 6.5 max. • Low collector-eimitter saturation voltage VcEisau • High speed switching


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    PDF 2SB952, 2SB952A 2SB952 2SB052A

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


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    PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


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    PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


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    PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


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    PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717

    2SA1302 TOSHIBA

    Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
    Text: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776


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    PDF 2SB1267 2SB937A 2SB1165 2SB933 2SB817 2SB863 2SA1227A 2SA1302 2SB1371 2SB776 2SA1302 TOSHIBA 2SA1302 Toshiba 2Sa1302 SB 1156 2SB1371 mitsubishi 1183 2SB1407 2SB1201