Untitled
Abstract: No abstract text available
Text: Product specification 2SB932 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1
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2SB932
O-252
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1255 Silicon NPN epitaxial planar type 3.4±0.3 8.5±0.2 For power switching Complementary to 2SB932 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features 2.0 2.54±0.3 5.08±0.5 ea s ht e v tp is :// it
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2SD1255
2SB932
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2SB932
Abstract: 2SD1255
Text: Power Transistors 2SD1255 Silicon NPN epitaxial planar type 3.4±0.3 8.5±0.2 For power switching Complementary to 2SB932 1.0±0.1 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current
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2SD1255
2SB932
2SB932
2SD1255
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2SB0932
Abstract: 2SB932
Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 6.0±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB0932
2SB932)
2SB0932
2SB932
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)
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2SB0932
2SB932)
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2SB0932
Abstract: 2SB932 3004 IC
Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO
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2SB0932
2SB932)
2SB0932
2SB932
3004 IC
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2SB0932
Abstract: 2SB932 2SD1255
Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current
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2SB0932
2SB932)
2SB0932
2SB932
2SD1255
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2SB932
Abstract: 2SD1255
Text: Power Transistors 2SB932 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –4
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2SB932
2SB932
2SD1255
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2SB932
Abstract: No abstract text available
Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB932 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127
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2SB932
O-252
-10mA,
2SB932
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 10.0±0.3 1.5±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)
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2SB0932
2SB932)
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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BD149
Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25
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MJE800T
2N6296
MJE2481
MJE2483
2N3054A
2SD1092
2SD777
2SB604
2SD570
BD149
2N6297 Motorola
LM3661TL-1.40
2SD526-0
2SB5960
Motorola 2N6297
2SD5260
idb596
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2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
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2SB901
2SB902
2SB903
2SB904
2SB905
2SB906
2SB907
2SB908
2SB909
2SB910
2SB909
2SB971
2SB978
2sb911
2SB901
2SB917
2SB918
2SB983
2SD1347
2SB902
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2SB932
Abstract: 2SD1255
Text: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching C om plem entary Pair w ith 2SB932 ■ Features • Low collector-emitter saturation voltage V cf mj • Good linearity of DC current gain (hn.)
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2SD1255
2SB932
2SD1253/A)
bT32652
2SB932
2SD1255
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB932 2SB932 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1255 Unit ! mm • Features 8.7 max. • L ow co lle cto r-e m itte r satu ration voltage V ceim» 6.5 max. I» "I 3.7 max. F— -
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2SB932
2SD1255
i3E65E
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PNP 157A
Abstract: 2SB932 2SD1255 hi-ki J3010 IB-015
Text: Power T ransistors 2SB932 2SB932 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1255 • Features Unit ! mm , • G o o d lin e a rity of D C c u r re n t gain 3.7 max. 8.7 max. • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e CVceimd
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2SB932
2SD1255
JH-10i
2SB930/A)
PNP 157A
2SB932
2SD1255
hi-ki
J3010
IB-015
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2SD1539
Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5
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O-126
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SC3942
2SD1539
d53 pnp transistor
2sa137
2sb1071
2SA1375
2SA1605
2SA1817
2SC2258
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PA8080
Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)
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2SD1245
2SD1246
2SD1247
2SD1248K
2SD1249
2SD1249A
2SD1250
2SD1259A
2SB937
2SD1260
PA8080
2SD1246
2SD1247
2SD1250A
2SD1251
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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2SC4714
Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F
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O-126
D52SK,
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SA1817
2SD1539
2SA1605
2SC2258
2SC3063
2SC3942
2SC3945
2SC4717
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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B1548
Abstract: 2SB1299A
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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T0-220
O-220F
2SB954/A
2SB1052
2SD1480
2SD1265/A
O-220E
T0220D
2SB1169/A
2SB1170
B1548
2SB1299A
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