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    2SC2710 Search Results

    2SC2710 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2710 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2710 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2710 Unknown Cross Reference Datasheet Scan PDF
    2SC2710 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2710 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2710 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2710 Unknown Silicon NPN for audio application Scan PDF
    2SC2710 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2710 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2710 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2710 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC2710 Toshiba Silicon NPN transistor for audio amplifier applications Scan PDF
    2SC2710 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SC2710-O Toshiba 2SC2710 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2710-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2710O Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC2710-Y Toshiba 2SC2710 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2710-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2710Y Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF

    2SC2710 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SA1150 2SC2710 2SA1150 2SC2710

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SC3199

    Abstract: 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488
    Text: TO-92S PACKAGE MX MICROELECTRONICS ● Applied for TV,AV and buzzers amplifiers. NPN TYPE ICBO OR Ptot Ic VCBO VCEO * ICEO ▲ ICES 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3488 2SC2710 2SC1740S 2SC1741S AD825 VCES VCB


    Original     		PDF O-92S 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3199 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488

    2SA1150

    Abstract: 2SA115 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SA115 2SC2710

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    2SC2710

    Abstract: 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA1150

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    2SC2710

    Abstract: 2SA115 2SA1150
    Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SC2710 2SA1150 2SC2710 2SA115 2SA1150

    25C2710

    Abstract: 2SA1150 2SC2710
    Text: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150 25C2710 2SA1150 2SC2710

    N1H1

    Abstract: No abstract text available
    Text: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SA1150 2SC2710. 55MAX. N1H1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC2710 2SA1150

    A1150 transistor

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
    Text: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		PDF 2SA1150 2SC2710. 55MAX. A1150 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150

    A1150 transistor

    Abstract: 2SA1150 2SC2710 A1150
    Text: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1150 2SC2710. A1150 transistor 2SA1150 2SC2710 A1150

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS n r ? MT 7 m i n m w FOR AUDIO AMPLIFIER APPLICATIONS • High DC C urrent Gain : • Complementary to 2SA1150 U nit in mm 4.2MAX. hjr>E(l)-100~320 0.55MAX. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2710 2SA1150 55MAX.

    2SC3378

    Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
    Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current


    OCR Scan     		PDF 2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184

    Untitled

    Abstract: No abstract text available
    Text: 2SA1150 TOSHIBA 2 S A 1 1 50 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . • • High hpE : hFE = 100~320 Complementary to 2SC2710. 0 .5 5 M A X - M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1150 2SC2710.

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2SC3941A

    Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
    Text: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732


    OCR Scan     		PDF 2SC3142 2SC3735 2SC24Q4 2SC2791 2SC3737 2SC3738 2SC3608 2SC3358 2SC3791 2SC3143 2SC3941A c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737

    2SC3558

    Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
    Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD


    OCR Scan     		PDF 2SC3331 2SC2021 2SD1851 2SD2532 2SD1209 2SD1383K 2SD1400 2SD1429 2SD1060 2SC3540 2SC3558 2SD1431 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532

    2sd1878

    Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
    Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö


    OCR Scan     		PDF 2SD2298 2SD2299 2SD2300 2SD2301 2SD2302 2SD2303 2SD2304 2SD2305 2SD2306 2SD2307 2sd1878 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431

    1032B

    Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
    Text: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD


    OCR Scan     		PDF 2SD1011 2SD1012 2SD1017 2SD1018 2SD1020 2SD1021 2SD1022 2SC3622 2SC3069 2SC3495 1032B 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2SB1012

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C