2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2030A

Abstract: 2SC3066
Contextual Info: 2SC3066 N0.976B SA \YO F NPN Epitaxial Planar S il ic o n Transistor i D i f f e r e n t i a l Am p A p p l i c a t i o n s V. Jl, Applications . Differential amp, current mirror Il •" 4% ':;|.vv II .:V Features •\, "V /./ ^ *■ • Excellent in thermal equilibrium and suited .

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

Contextual Info: i i SAWYO F 2SC3067 N0.978B NPN E p i t a x i a l Planar S i l i c o n Transistor Dif fe r e n t ia l Amp A p p l i c a t i o n s "’V Features • Excellent in thermal equilibrium and suited Jttfr in " •?% differential amp%K W;V- |! |: . Low noise. /.

2SC3063

Contextual Info: Power Transistors 2SC3063 Silicon NPN triple diffusion planar type Unit: mm For TV video output amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector to emitter voltage VCEO • Small collector output capacitance Cob • TO-126B package which requires no insulation plate for installation to the heat sink

2SC3068

Abstract: kc00
Contextual Info: Ordering number: EN 943G _ N 0.943G 2SC3068 NPN Epitaxial Planar Silicon Transistor i High hpE, Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hFE=800 to 3200

2SC3063

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3063 Silicon NPN triple diffusion planar type For TV video output amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter

2SC3061

Abstract: npn ie 4a
Contextual Info: SavantIC Semiconductor Product Specification 2SC3061 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators

Contextual Info: Power Transistors 2SC3063 2SC3063 Silicon PNP Triple-Diffused Planar Type Package Dimensions T V Video Output Amplifier • Features • H ig h c o lle c t o r - e m itte r v o lta g e V ceo • Sm all c o lle c t o r o u tp u t c a p a c ita n c e ( C 0b)

2SC3068

Abstract: VEBO-15V
Contextual Info: Ordering number:EN943G NPN Epitaxial Planar Silicon Transistor 2SC3068 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low-frequency, general-purpose amplifier., various drivers, muting circuit. unit:mm 2003A

2sc3067

Contextual Info: 2SC3067 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V)120 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC3063

Abstract: 02APC
Contextual Info: SavantIC Semiconductor Product Specification 2SC3063 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings Ta=25

30ma 40v npn

Abstract: 2SC3063
Contextual Info: Inchange Semiconductor Product Specification 2SC3063 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High VCEO ・Low COB APPLICATIONS ・For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

2SC3063

Contextual Info: Power T ransistors 2SC3063 2SC3063 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s T V V id e o O u tp u t A m p lifie r I F e a tu re s High collector-emitter voltage Small collector output capacitance Cob (V ce o ) A b s o lu te M a x im u m R a tin g s (T a = 2 5 °C )

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3063 Silicon NPN triple diffusion planar type For TV video output amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter

2SA675

Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Contextual Info: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N

2SC3066

Contextual Info: Ordering number : 9 7 6 B NPN Epitaxial Planar Silicon Transistor 2SC3066 Differential Amp Applications

2sc3178

Abstract: 2SC3059 5400V C00C
Contextual Info: January 1990 Edition 1.1 P R O D U C T P R O FILE 2SC3178, 2SC3059, 2SC3060, 2SC3061 Silicon High Speed Power Transistor DESCRIPTION T h is series are s ilic o n NPN p la n e r general p u rp o se , h ig h p o w e r s w itc h in g tra n s is to rs fa b ric a te d w ith F u jits u 's

2SC3063

Contextual Info: Power Transistors 2SC3063 Silicon NPN triple diffusion planar type Unit: mm For TV video output amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High collector to emitter voltage VCEO • Small collector output capacitance Cob • TO-126B package which requires no insulation plate for installation to the heat sink

2SC3069

Contextual Info: Ordering number:EN 934G 2SC3069 N0.934G NPN Epitaxial Planar Silicon Transistor SANYO i High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Featu res • High DC current gain hpE=800 to 3200

2SC3060

Contextual Info: SavantIC Semiconductor Product Specification 2SC3060 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators

2SC3063

Abstract: POWER TRANSISTORS Jmnic
Contextual Info: JMnic Product Specification 2SC3063 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High VCEO ・Low COB APPLICATIONS ・For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings Ta=25℃

2SC3050

Abstract: 2SC3178 2SC306 2SC3059 NPN Transistor VCEO 1000V 2SC3118 2SC3060 2SC3061 NPN transistor for switching applications, 400V fujitsu RET transistors
Contextual Info: F U J I TS U M I C R O E L E C T R O N I C S 31E D Bi 3 7 M ci7ti2 O ü l b S T O □ IHFfll c P r - 3 3 *-nr U l T T f T January 1990 Edition 1.1 rU JllbU "= " PRODUCT PROFILE ' 2SC3178, 2SC3059, 2SC3060, 2SC3061 Silicon High Speed Power Transistor_

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3063 Silicon NPN triple diffusion planar type For TV video output amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter