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Toshiba America Electronic Components 2SC3421-O(Q)
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2SC3421 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3421	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SA1358	Original	PDF
2SC3421	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC3421	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3421	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3421	Unknown	Cross Reference Datasheet	Scan	PDF
2SC3421	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3421	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3421	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3421	Unknown		Scan	PDF
2SC3421	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3421	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3421	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3421	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC3421	Toshiba	Silicon NPN transistor for audio frequency power amplifier applications	Scan	PDF

2SC3421	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF
2SC3421	Toshiba	TO-126 Package Transistor	Scan	PDF
2SC3421-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3421O	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF
2SC3421-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3421Y	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF

2SC3421 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO- 126C 2SC3421 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage 2. COLLECTOR	Original	O-126C 2SC3421 2SA1358 100mA 500mA	PDF
2sa1358 Abstract: TRANSISTOR A1358 A1358 Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)	Original	2SA1358 2SC3421 2sa1358 TRANSISTOR A1358 A1358	PDF
c3421 transistor Abstract: C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421 Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)	Original	2SC3421 2SA1358 c3421 transistor C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421	PDF
TRANSISTOR A1358 Abstract: 2SA1358 a1358 transistor A1358 2SC3421 Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)	Original	2SA1358 2SC3421 TRANSISTOR A1358 2SA1358 a1358 transistor A1358 2SC3421	PDF
2sa1358 Abstract: 2SC3421 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2SA1358 -120V 2SC3421 -500mA; -50mA -500mA -120V; 2sa1358 2SC3421	PDF
2SA1358 Abstract: 2sa135 Audio Output Transistor Amplifier 2SC3421 2SC342 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2SA1358 -120V 2SC3421 -500mA; -50mA -500mA -120V; 2SA1358 2sa135 Audio Output Transistor Amplifier 2SC3421 2SC342	PDF
2SC3421 Abstract: Audio Output Transistor Amplifier audio NPN 2SA1358 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2SC3421 2SA1358 500mA; 500mA 2SC3421 Audio Output Transistor Amplifier audio NPN 2SA1358	PDF
c3421 transistor Abstract: c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)	Original	2SC3421 2SA1358 c3421 transistor c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA	PDF
2SA1358 Abstract: A1358 2SC3421 Text: 2SA1358 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1358 ○ 電力増幅用励振段増幅用単位: mm • 2SC3421 とコンプリメンタリになります。 • PO = 60~80 W メインアンプドライバー段に最適です。	Original	2SA1358 2SC3421 20070701-JA 2SA1358 A1358 2SC3421	PDF
Untitled Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1358 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)cEo=-120V(Min) • Complement to Type 2SC3421	Original	2SA1358 -120V 2SC3421 O-126 -10mA; -500mA; -50mA -500mA -120V;	PDF
2sa1358 Abstract: TRANSISTOR A1358 a1358 transistor Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)	Original	2SA1358 2SC3421 2sa1358 TRANSISTOR A1358 a1358 transistor	PDF
c3421 transistor Abstract: c3421 Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)	Original	2SC3421 2SA1358 c3421 transistor c3421	PDF
c3421 transistor Abstract: c3421 2SA1358 2SC3421 Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	2SC3421 2SA1358 c3421 transistor c3421 2SA1358 2SC3421	PDF
c3421 Abstract: 2SC3421 2SA1358 6080w Text: 2SC3421 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3421 ○ 電力増幅用励振段増幅用単位: mm • 2SA1358 とコンプリメンタリになります。 • PO = 60~80 W メインアンプドライバ段に最適です。	Original	2SC3421 2SA1358 c3421 2SC3421 2SA1358 6080w	PDF

2SA1358 Abstract: 2SC3421 A1358 TRANSISTOR A1358 Text: 2SA1358 TO SH IBA 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • • • 0 £ i± cn Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.	OCR Scan	2SA1358 2SC3421 2SA1358 A1358 TRANSISTOR A1358	PDF
2SA1358 Abstract: 2SC3421 Text: 2SC3421 T O S H IB A 2SC3421 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY PO W ER A M PLIFIER APPLICATIONS 8.3 MAX. • • • 5.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage	OCR Scan	2SC3421 2SA1358 2SA1358 2SC3421	PDF
2sa1358 Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE 2SA1358 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.1 ¿Oil . Complementary to 2SC3421 . Suitable for Driver of 60 to 80 Watts. 3- . High Breakdown Voltage. 1.0MAX. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC	OCR Scan	2SA1358 2SC3421 -10mA, -100mA -500mA, -50mA -500mA -100mA 30LLEGT0R-EMITTER 2sa1358	PDF
2SC3421 Abstract: 2SA1358 B1030 AX1030 Text: 2SC3421 TO SHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 53.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage	OCR Scan	2SC3421 2SA1358 2SC3421 2SA1358 B1030 AX1030	PDF
2SA1358 Abstract: 2SC3421 Text: 2SC3421 TO SH IBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 43.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage	OCR Scan	2SC3421 2SA1358 2SA1358 2SC3421	PDF
2sc3421 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE 2SC3421 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Complementary to 2SA1358 . Suitable for Driver of 60 to 80 Watts Audio Amplifier . High Breakdown Voltage MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC3421 2SA1358 100mA 500mA, 500mA 2sc3421	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1 mm M T • U nit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 M AX. 53.1 ± 0 . 1 S.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 W atts Audio Amplifier High Breakdown Voltage	OCR Scan	2SC3421 2SA1358	PDF
2SC1815 Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A Text: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %	OCR Scan	2SC2242 2SC3421 2SC2497 2SC2497A 2SC2075 2SD718 2SD1270 2SC1815 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A	PDF
Untitled Abstract: No abstract text available Text: 2SA1358 SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. U n it in min 6.3 M A X . • • • Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage. MAXIMUM RATINGS (Ta = 25°C) SYMBOL • RATING	OCR Scan	2SA1358 2SC3421 --100mA --500mA, --50mA -500m -100m --10V,	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3421 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. • • • m RATING 120 120 5 1 100 1.5 10 150 -5 5 - 1 5 0 UNIT V V V A mA 0.75 ± 0.15 2.3 ±0.1 2.3 ± 0.1 _•	OCR Scan	2SC3421 2SA1358	PDF

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2SC3421 Search Results

2SC3421 Price and Stock

Toshiba America Electronic Components 2SC3421-O(Q)

2SC3421 Datasheets (20)

2SC3421 Datasheets Context Search

Untitled

2sa1358

c3421 transistor

TRANSISTOR A1358

2sa1358

2SA1358

2SC3421

c3421 transistor

2SA1358

Untitled

2sa1358

c3421 transistor

c3421 transistor

c3421

2SA1358

2SA1358

2sa1358

2SC3421

2SA1358

2sc3421

Untitled

2SC1815

Untitled

Untitled