2SC3673 Search Results

2SC3673 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3673	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor	Original	PDF
2SC3673	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3673	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3673	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3673	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3673	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3673	Toshiba	Silicon NPN transistor for switching applications and solenoid drive applications	Scan	PDF
2SC3673	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE	Scan	PDF

2SC3673 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2-7D101A Abstract: 2SC3673 C3673 Text: 2SC3673 東芝トランジスタシリコンNPNエピタキシャル形 2SC3673 ○ スイッチング用 ○ ソレノイドドライブ用単位: mm • 直流電流増幅率が高い。 • コレクタ•エミッタ間飽和電圧が低い。 : VCE sat = 0.5 V (最大)	Original	2SC3673 2-7D101A 2-7D101A 2SC3673 C3673	PDF
2-7D101A Abstract: 2SC3673 C3673 Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain : hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3673 2-7D101A 2SC3673 C3673	PDF
2-7D101A Abstract: 2SC3673 C3673 Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3673 2-7D101A 2SC3673 C3673	PDF
Untitled Abstract: No abstract text available Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3673	PDF
Untitled Abstract: No abstract text available Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3673 2-7D101A	PDF
2-7D101A Abstract: 2SC3673 C3673 Text: 2SC3673 東芝トランジスタシリコンNPNエピタキシャル形 2SC3673 ○ スイッチング用 ○ ソレノイドドライブ用単位: mm • 直流電流増幅率が高い。 mA • コレクタ•エミッタ間飽和電圧が低い。 : VCE sat) = 0.5 V (最大)	Original	2SC3673 2-7D101A 20070701-JA 2-7D101A 2SC3673 C3673	PDF
2SC3673 Abstract: 2-7D101A C3673 Text: 2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3673 2SC3673 2-7D101A C3673	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2-7D101A Abstract: 2SC3673 Text: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 MAX. 2.7MAX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : VCE (sat) -0.5V (Max.) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC3673 2-7D101A 2-7D101A 2SC3673	PDF

2-7D101A Abstract: 2SC3673 Text: TO SH IBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 M A X • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC3673 2-7D101A 2-7D101A 2SC3673	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 SWITCHING APPLICTIONS Unit in mm SOLENOID DRIVE APPLICATIONS 7.1 MAX. • • High DC Current Gain : hpE = 500 Min. Low Saturation Voltage : V qe ( S a t ) = ^-5V (Max.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC3673	PDF
2-7D101A Abstract: 2SC3673 Text: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 M A X. • • High DC Current Gain : hjpg —500 Min. Low Saturation Voltage : VcE (sat) -0.5V (Max.) M AXIM UM RATINGS (Ta = 25°C)	OCR Scan	2SC3673 2-7D101A 2-7D101A 2SC3673	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3673 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE <;r 7 73 Unit in mm SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS 7.1 M AX. • • High DC Current Gain : hjr^ = 500 Min. Low Saturation Voltage : V ç e (gat)~0.5V (Max.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC3673 2-7D101A	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. • High DC Current Gain: hj-j;=500 Min. (Ic=400mA) • Low Saturation Voltage: V^£(sat)=0.5V (Max.) (Ic=300mA) MAXIMUM RATINGS (Ta=25° C) SYMBOL RATING	OCR Scan	2SC3673 400mA) 300mA) 400mA 300mA, 300mAf	PDF
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P	PDF

Privacy Settings

2SC3673 Search Results

2SC3673 Datasheets (8)

2SC3673 Datasheets Context Search

2-7D101A

2-7D101A

2-7D101A

Untitled

Untitled

2-7D101A

2SC3673

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

GT30F124

transistor bc 245

2-7D101A

2-7D101A

Untitled

2-7D101A

Untitled

Untitled

70H40

15J102

2sC5200, 2SA1943, 2sc5198

2SC144

TA8172AF