2SC3930 Search Results

2SA1532

Abstract: 2SC3930
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

2SA1532G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SA1532

Abstract: 2SC3930
Contextual Info: Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm 0.425 For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

2SA1532G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SA1532

Abstract: 2SC3930
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ M Di ain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2

marking EB 202 transistor

Abstract: 2SA1532 2SC3930
Contextual Info: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

marking VB

Abstract: NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High transition frequency fT. z Optimum for RF amplification of 2SC3930W Pb Lead-free FM/AM radios. z For high-frequency amplification complementary to 2SA1532.

2SC3930G

Abstract: 2SA1532G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1532G • Features ue pl d in an c se ed lud pl vi

2SA1532G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification Complementary to 2SC3930G • Features ue pl d in an c se ed lud pl vi

200MHZ

Abstract: 2SA1532 2SC3930 100A 2MHZ
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC3930 SOT-323 TRANSISTOR NPN FEATURES z For high-frequency Amplification Complementary to 2SA1532 z Optimum for RF amplification of FM/AM radios z High transition frequency fT

2SA1532

Abstract: 2SC3930
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios

2SA1532

Abstract: 2SC3930
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and