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    2SC4132 Search Results

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    2SC4132 Price and Stock

    ROHM Semiconductor 2SC4132T100P

    TRANS NPN 120V 2A MPT3
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    DigiKey 2SC4132T100P Reel 1,000
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    2SC4132T100P 531
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    ROHM Semiconductor 2SC4132T100Q

    TRANS NPN 120V 2A MPT3
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    2SC4132T100Q 33,900
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    ROHM Semiconductor 2SC4132T100R

    TRANS NPN 120V 2A MPT3
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    2SC4132T100R Digi-Reel 1
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    Component Electronics, Inc 2SC4132T100R 1,895
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    ROHM Semiconductor 2SC4132 T100P

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    Bristol Electronics 2SC4132 T100P 783
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    ROHM Semiconductor 2SC4132

    TRANSISTOR,BJT,NPN,120V V(BR)CEO,2A I(C),SOT-89
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    Quest Components 2SC4132 26,294
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    2SC4132 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4132 Kexin NPN Epitaxial Planar Silicon Transistors Original PDF
    2SC4132 ROHM Power Transistor (120V, 1.5A) Original PDF
    2SC4132 ROHM Power Transistor Original PDF
    2SC4132 ROHM Power Transistor (120V, 1.5A) Original PDF
    2SC4132 ROHM Power Transistor (120V, 1.5A) Original PDF
    2SC4132 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4132 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC4132 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4132 ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SC4132 ROHM Power Transistor (120V, 1.5A) Scan PDF
    2SC4132 ROHM Power Transistor (120V, 1.5A) Scan PDF
    2SC4132N ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SC4132P ROHM NPN Transistor Scan PDF
    2SC4132Q ROHM NPN Transistor Scan PDF
    2SC4132R ROHM NPN Transistor Scan PDF
    2SC4132T100P ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DVR NPN 120V 1.5A SOT89 TR Original PDF
    2SC4132T100Q ROHM Power Transistor (120 V, 1.5 A) Original PDF
    2SC4132T100R ROHM Power Transistor (120V, 1.5A) Original PDF
    2SC4132T100R ROHM Power Transistor (120 V, 1.5 A) Original PDF

    2SC4132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100V 2A MPT3

    Abstract: 2SB1236 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 2A 2SC4132 / 2SD1857 zDimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)


    Original     		PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. SC-62 100V 2A MPT3 2SB1236 2SD1857 T100

    2SD2343

    Abstract: 2SB1236 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343


    Original     		PDF 2SC4132 2SD1857 2SD2343 2SC4132 80MHz) 2SB1236. 2SD2343 2SB1236 T100

    to390

    Abstract: 2SC4132 marking 82
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage


    Original     		PDF 2SC4132 80MHz) 40X40X0 30MHz to390 to390 2SC4132 marking 82

    2SB1236

    Abstract: 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation


    Original     		PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. 2SB1236 2SD1857 T100

    2SB1186

    Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
    Text: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276


    Original     		PDF 2SB1236 2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 94L-268-A56) 96-175-C56) 2SB1186 2sb1186 equivalent 2SD1763

    2SB1236

    Abstract: 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 PC 2 Collector current 2SC4132 Collector power dissipation Junction temperature


    Original     		PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. 2SB1236 2SD1857 T100

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V)


    Original     		PDF 2SC4132 2SD1857 80MHz) 2SB1236. 2SC4132 2SD1857 SC-62

    RB815

    Abstract: Model 450 Q2SC4132 2SC4132 rc28932e3
    Text: SPICE PARAMETER 2SC4132 by ROHM TR Div. * 2SC4132 NPN BJT model * Date: 2006/11/20 .MODEL 2SC4132 NPN + IS=450.00E-15 + BF=90.847 + VAF=7.7000 + IKF=1.9224 + ISE=450.00E-15 + NE=1.4462 + BR=84.284 + VAR=100 + IKR=.28392 + ISC=2.3425E-9 + NC=1.8142 + NK=.67816


    Original     		PDF 2SC4132 Q2SC4132 00E-15 3425E-9 932E-3 88E-12 705E-12 8687E-9 RB815 Model 450 2SC4132 rc28932e3

    2SD1857

    Abstract: 2SB1236 2SC4132 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 2 W Collector current Collector power dissipation ICP 2SC4132 PC 6.8 2.5 *1 *2 0.65Max.


    Original     		PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. 65Max. 2SD1857 2SB1236 T100

    2SD1857

    Abstract: ROHM marking hFE CODE ROHM marking hFE 2SB1236 2SC4132 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation


    Original     		PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. 2SD1857 ROHM marking hFE CODE ROHM marking hFE 2SB1236 T100

    2SC4132

    Abstract: No abstract text available
    Text: Power Transistor 120V, 2A 2SC4132 zDimensions (Unit : mm) 2SC4132 4.5 1.6 1.5 2.5 4.0 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.


    Original     		PDF 2SC4132 80MHz) 2SB1236. SC-62 2SC4132

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 K 7 > V 3. £ /Transistors 2SC4 4 3 2 1 ^ y I/ - n p n 5/ y □ K 7 > > 7 y Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • • W fH '& H /D in ien slon s UnH : mm 1) Î B Œ Î Î 5 . BVc e o = 120V 2) fT I .€±0. t i?M < , Cob * ' m ' o


    OCR Scan     		PDF 2SC4132 SC-62

    2sd1763

    Abstract: No abstract text available
    Text: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)


    OCR Scan     		PDF 2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763

    D1763

    Abstract: MARKING HRA SC4132 2SD1763 transistor D1857 B1186
    Text: 2SB1236 / 2SB1186 2SC4132 / 2SD185712SD2343 / 2SD1763 Transistors Power Transistor — 120V, — 1.5A 2S B 1236 / 2S B 1186 •F e atu res 1 ) High breakdown voltage. iB V cso — — 120V) 2 ) Low collector output capacitance. (Typ. SO pFatV cB5 — 10V)


    OCR Scan     		PDF 2SB1236 2SB1186 2SC4132 2SD185712SD2343 2SD1763 50MHz) 2SD1857/2SD1763. 2SB11B8 O-220FPwn D1763 MARKING HRA SC4132 2SD1763 transistor D1857 B1186

    2SD1763 transistor

    Abstract: 2SD1763 2SD2343 2SB1166 2SB1186 2SB1236 2SC4132 2SD1857 transistor 120v 40X40X0
    Text: 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors I 120V, —1.5A Power Transistor 2SB1236 / 2SB1186 • A b s o lu t e m axim um ratings (T a = 2 5 'C ) •F e a tu re s 1) H ig h b re a k d o w n v o lta g e . (B V ceo = — 1 2 0 V )


    OCR Scan     		PDF 2SB1236 2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1186 50MHz) 2SD1857/2SD1763. 2SD1763 transistor 2SD1763 2SB1166 transistor 120v 40X40X0

    2SC4132

    Abstract: T100 sc-62 package oc sc62
    Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SC4132; CB-A-, where ★ is hFE code high breakdown voltage BVqeo = 120 V high transition frequency (fT) low output capacitance (Cob)


    OCR Scan     		PDF 2SC4132 OT-89, SC-62) 2SC4132; 2SC4132 0D147Ã T100 sc-62 package oc sc62

    2SC4132

    Abstract: T100 T101
    Text: h7 >V o c ^ 2SC4132 £ /Transistors 4 1 3 2 >u=3> Epitaxial Planar NPN Silicon Transistor Ji>j£^^ jiS lli# !/L o w Freq. Power Amp. • • ^t- \t"ji@/Dimensions U nit: mm 1) ® S 6 } li7 ife - 5 o BVceO=120V 2) fT ifm t < , Cob Af,® '''o 3) P c = 2 W T * £


    OCR Scan     		PDF 2SC4132 40X40X0 SC-62 40WX40LX0 2SC4132 T100 T101

    2SD1857

    Abstract: Transistor 2SD1857 2SB1236 2SC4132 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB
    Text: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = 120V) 2) Low collector output capacitance. 2SC4132 (Typ. 20pF at V cb = 10V)


    OCR Scan     		PDF 2SC4132 2SD1857 2SD2343 80MHz) 2SB1236. 2SD1857 Transistor 2SD1857 2SB1236 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB

    2SD977

    Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
    Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K


    OCR Scan     		PDF 2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


    OCR Scan     		PDF Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89)

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    KY 719

    Abstract: 122JK TB163TK TB143TK
    Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75


    OCR Scan     		PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK