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    2SC4210 Search Results

    2SC4210 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4210 Kexin Silicon NPN Epitaxial Original PDF
    2SC4210 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4210 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4210 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4210 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4210 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC4210 Toshiba NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SC4210 Toshiba NPN Transistor Scan PDF
    2SC4210O Toshiba Silicon NPN Transistor Scan PDF
    2SC4210Y Toshiba Silicon NPN Transistor Scan PDF

    2SC4210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


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    PDF 2SC4210 2SA1621 O-236MOD SC-59 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


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    PDF 2SC4210 2SA1621

    2SC4210

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


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    PDF 2SC4210 OT-23 2SC4210

    2SA1621

    Abstract: 2SC4210
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SA1621 2SC4210 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SA1621 2SC4210 O-236MOD

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • • Unit: mm High hFE: hFE = 100 to 320 Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SA1621 2SC4210

    2SA1621

    Abstract: 2SC4210
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SA1621 2SC4210 O-236MOD 2SA1621 2SC4210

    2SC4210

    Abstract: 2SA1621
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 · Complementary to 2SA1621 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SC4210 2SA1621 O-236MOD 25transportation 2SC4210 2SA1621

    2SA1621

    Abstract: 2SC4210
    Text: 2SA1621 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1621 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC4210 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original
    PDF 2SA1621 2SC4210 O-236MOD SC-59 2SA1621 2SC4210

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    PDF 2SC4210 2SA1621 2SA1621 2SC4210

    2SA1621

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SA1621 2SC4210 2SA1621

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    PDF 2SA1621 2SC4210

    2SD1810

    Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
    Text: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5


    OCR Scan
    PDF 2SC4210 2SD596 2SC2618 2SD1328 2SC4209 2SD780A 1782K 2SC4209 2SD602A 2SD1810 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 TO SH IBA 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1621 + 0.5 2 . 5 - 0.3 = 100~320 + k 1-5 0.25 - ° - 15 >i I- MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SC4210 2SA1621 O-236MOD SC-59 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC4210 2SC4210 T O SH IB A TRA NSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER A PPLICATIO NS • • High DC Current Gain : Complementary to 2SA1621 U n it in m m = 100~320 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    PDF 2SC4210 2SA1621 O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1621 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 6 21 U nit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 • High IrpE : ^FE = 100—320 • Complementary to 2SC4210 + 0 .2 5 1 . 5 - 0 .1 5 ivìAXi M ü ivi RATi NGS (Ta = 2 5CC)


    OCR Scan
    PDF 2SA1621 2SC4210 O-236MOD SC-59

    sc4210

    Abstract: 2SA1621 2SC4210
    Text: TOSHIBA 2SC4210 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : hjpg — 100~320 Complementary to 2SA1621 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SC4210 SC4210 2SA1621 O-236MOD sc4210 2SA1621 2SC4210

    2SA1621

    Abstract: 2SC4210 A1621
    Text: TO SHIBA 2SA1621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 621 AUDIO PO W ER AM PLIFIER APPLICATIONS Unit in mm + 0.5 2.5 - 0.3 High hpE : hpE = 100~320 • Complementary to 2SC4210 + 0.25 + 0.1 0 .4 - 0 .0 5 • i SYMBOL CHARACTERISTIC


    OCR Scan
    PDF 2SA1621 2SC4210 961001EAA2' 2SA1621 2SC4210 A1621

    2SA1621

    Abstract: 2SC4210 A1621
    Text: 2SA1621 TO SH IBA 2 S A 1 621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS + 0.5 • • High hpE • hpE = 100~320 Complementary to 2SC4210 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SA1621 2SC4210 O-236MOD SC-59 2SA1621 A1621

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    2sd1878

    Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
    Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö


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    PDF 2SD2298 2SD2299 2SD2300 2SD2301 2SD2302 2SD2303 2SD2304 2SD2305 2SD2306 2SD2307 2sd1878 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431