2SC4624 Search Results

2SC4624 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC4624		Mitsubishi	MITSUBISHI RF POWER TRANSISTOR		Scan	PDF
2SC4624		Mitsubishi	NPN EPITAXIAL PLANAR TYPE		Scan	PDF

2SC4624 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SC4624 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)35 I(C) Max. (A)15 Absolute Max. Power Diss. (W)110# Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)15	Original	PDF	2SC4624
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
T44E Abstract: "RF Power Amplifiers" 2SC4624 N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEA TU R ES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	PDF	2SC4624 2SC4624 900MHz, 900MHz. 800-900MHz T-44E 900MHz T44E "RF Power Amplifiers" N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	PDF	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz
2sc4624 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	PDF	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz
2sc2538 Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094 Text: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )	OCR Scan	PDF	150MHz 2SC20S3 2SC1970 2SC730 2SC1947 2SC197Í 2SC2237 2SC1972 2SC2094 2SC1729 2sc2538 hpa b 110 2SC2S39 2SC5125 2sc4624