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    2SC4989 Search Results

    2SC4989 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4989 Mitsubishi RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC4989 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF

    2SC4989 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    transistor 5d

    Abstract: transistor 1P t
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,


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    PDF 2SC4989 2SC4989 520MHz, 520MHz transistor 5d transistor 1P t

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,


    OCR Scan
    PDF 2SC4989 2SC4989 520MHz, 520MHz

    TRANSISTOR 1P

    Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,


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    PDF 2SC4989 2SC4989 520MHz, T-40E Tc-25^ 520MHz TRANSISTOR 1P 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 1P RF uhf power transistor 50W

    2sc2538

    Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094
    Text: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25*C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K* V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )


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    PDF 150MHz 2SC20S3 2SC1970 2SC730 2SC1947 2SC197Í 2SC2237 2SC1972 2SC2094 2SC1729 2sc2538 hpa b 110 2SC2S39 2SC5125 2sc4624