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    2SC5110 Search Results

    2SC5110 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5110 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC5110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC5110 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5110 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5110 Toshiba NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) Scan PDF
    2SC5110 Toshiba NPN Transistor Scan PDF
    2SC5110-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5110Y Toshiba Silicon NPN Epitaxial Planar Transistor Scan PDF
    2SC5110-Y Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    2SC5110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 1298

    Abstract: marking 603 npn transistor
    Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO


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    PDF 2SC5110 SC-70 IC 1298 marking 603 npn transistor

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage


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    PDF 2SC5110 2SC5110

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage


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    PDF 2SC5110 2SC5110

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5110 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ・ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ・ エ ミ ッ タ 間 電 圧


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    PDF 2SC5110 SC-70 -j150 -j100 -j250 2SC5110

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO


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    PDF 2SC5110 SC-70 2SC5110

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


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    PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


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    PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


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    PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


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    PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2SC5110 SC-70 --j50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5110 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 <;r s 1 1 n WÊF wmr • ■ FOR VCO APPLICATION U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


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    PDF 2SC5110

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5110 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 1.25 ± 0 .1 | MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage


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    PDF 2SC5110 SC-70

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation


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    PDF 2SC5110 2SC5110

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5110 TOSHIBA TRANSISTOR 2 S SILICON NPN EPITAXIAL PLANAR TYPE C 5 1 1 Unit in mm FOR VCO APPLICATION 2.1 ± 0.1 M A X IM U M R A T IN G S Ta = ? S °C l CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


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    PDF 2SC5110 SC-70

    2SC5110

    Abstract: IC IL 1117
    Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2SC5110 SC-70 2SC5110 IC IL 1117

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TO SH IBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation


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    PDF 2SC5110 2SC5110

    2N2886

    Abstract: FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N2886 FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153

    2SC111

    Abstract: 2SC1381 b1260 BC226 BSW66At AT368 2n2886 st6574 2SC153 2SC308t
    Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    PDF 2N5211 200MSA 2SC304 200MI 2SC305 200MS 10Om0 NS1356 NS2101I 2SC111 2SC1381 b1260 BC226 BSW66At AT368 2n2886 st6574 2SC153 2SC308t

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76