transistor 2SC5066
Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U
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THN5601B
THN5702F
THN6601B
THN6701B
THN405Z
THN420Z
THN450Z
THN520Z
THN620Z
THN640Z
transistor 2SC5066
2sc5066
2SC5067
BFP620
UPC2709
2SC5066 data sheet
thn6601b
2SC5066 datasheet
NESG260234
BFP450
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2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
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2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
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2SC5316
Abstract: No abstract text available
Text: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain
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2SC5316
16GHz
2SC5316
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5316 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm CHIP : fT = 16GHz series 2.1 ±0.1 ,1.25 ± 0.1, • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain :
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2SC5316
16GHz
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2SC5316
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • U nit in mm 2.1 ±0.1 I m —r 1 o +| +1 m O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)
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2SC5316
2SC5316
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Untitled
Abstract: No abstract text available
Text: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p
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2SC5316
16GHz
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2SC5316
Abstract: No abstract text available
Text: 2SC5316 TO SH IBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series U nit in mm 2.1 ±0.1 ,1.25 ± 0.1, • • —r m I +| +1 om O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)
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2SC5316
2SC5316
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MARKING toshiba
Abstract: 2SC531 toshiba marking 2SC5316
Text: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain
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2SC5316
16GHz
MARKING toshiba
2SC531
toshiba marking
2SC5316
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm CHIP : fT = 16GHz series 2.1 ±0.1 + 0.1 0.3-0 1.3 ±0.1 „ Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain
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2SC5316
16GHz
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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