2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SC5317FT
2SC5317FT
|
PDF
|
2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SC5317FT
2SC5317FT
|
PDF
|
2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5317FT ○ VHF~UHF 低雑音増幅用 fT = 16 GHz シリーズのチップを採用 単位: mm • 雑音特性が優れています。 : NF = 1.3dB (f = 2 GHz) •
|
Original
|
2SC5317FT
2SC5317FT
|
PDF
|
2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5317FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG
|
Original
|
2SC5317FT
2SC5317FT
|
PDF
|
sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
|
Original
|
BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
|
PDF
|
TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
|
Original
|
050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
TOSHIBA RF Power Module S-AV24
diode varicap BB 112
varicap v147
2SC386A
2SK1310
3SK78
2sc5066
V101 varicap diode
1SV149
2SK192
|
PDF
|
3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
|
Original
|
050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
3SK73
S-AV24
3SK121
3SK114
TOSHIBA RF Power Module S-AV24
3SK101
S-AU82VL
diode varicap BB 112
2SC2328
3SK112
|
PDF
|
transistor 2SC5066
Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U
|
Original
|
THN5601B
THN5702F
THN6601B
THN6701B
THN405Z
THN420Z
THN450Z
THN520Z
THN620Z
THN640Z
transistor 2SC5066
2sc5066
2SC5067
BFP620
UPC2709
2SC5066 data sheet
thn6601b
2SC5066 datasheet
NESG260234
BFP450
|
PDF
|
BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
|
Original
|
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
BB 505 Varicap Diode
s-av24
V101 varicap diode
varicap v101
varicap v147
varicap v103
replacement for 2sc5088 horizontal transistors
TOSHIBA S-AV29H
Zener c9v
3SK114
|
PDF
|
FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
|
Original
|
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
FET K161
S-AV24
k192a
Transistor C1923
C1923 transistor
k161 jfet
fet k241
k161 mosfet
C1923 transistor base
c2498 TRANSISTOR
|
PDF
|
VHF-UHF Band Low Noise Amplifier
Abstract: 2SC5317 2Ghz amplifier
Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
|
OCR Scan
|
2SC5317
16GHz
VHF-UHF Band Low Noise Amplifier
2SC5317
2Ghz amplifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05
|
OCR Scan
|
2SC5317FT
16GHz
S21el2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5317 TO SHIBA 2SC5317 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
|
OCR Scan
|
2SC5317
16GHz
|
PDF
|
2SC5317
Abstract: No abstract text available
Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
|
OCR Scan
|
2SC5317
16GHz
2SC5317
|
PDF
|
|
|
B F2g
Abstract: No abstract text available
Text: TOSHIBA 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 3 <;c 5 3 1 7 F W V W • » ■ V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series Low Noise Figure :N F = 1 .3 d B (f=2G H z) H igh Gain :|S 2 l e|2= 9dB (f=2G H z)
|
OCR Scan
|
2SC5317F
16GHz
B F2g
|
PDF
|
2SC5317FT
Abstract: No abstract text available
Text: TO SH IBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series 1.2 ±0 .0 5 • • U.O :t u .u o Low Noise Figure : NF = 1.3 dB (f = 2 GHz) High Gain
|
OCR Scan
|
2SC5317FT
0022gllectual
2SC5317FT
|
PDF
|
2SC5317F
Abstract: No abstract text available
Text: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1
|
OCR Scan
|
2SC5317F
16GHz
2SC5317F
|
PDF
|
2SC5317
Abstract: No abstract text available
Text: 2SC5317 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.3 dB (f = 2 GHz) High Gain
|
OCR Scan
|
2SC5317
2SC5317
|
PDF
|
2SC5317FT
Abstract: No abstract text available
Text: T O S H IB A 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2i e|2= 9dB (f=2GHz)
|
OCR Scan
|
2SC5317FT
16GHz
2SC5317FT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1
|
OCR Scan
|
2SC5317F
16GHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5317FT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • Low Noise Figure : NF = D A T I M f ZC •\ n i i i . u j !~ T n . \ i a — —
|
OCR Scan
|
2SC5317FT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ±0.1, r— r - i Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)
|
OCR Scan
|
2SC5317
16GHz
|
PDF
|
2SC5317
Abstract: No abstract text available
Text: 2SC5317 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series 1.6 ± 0.2 • • ,0.8 ± 0.1, r— r - i Low Noise Figure : NF = 1.3 dB (f = 2 GHz) High Gain
|
OCR Scan
|
2SC5317
2SC5317
|
PDF
|
2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
|
OCR Scan
|
T258-OMI
FAX06
2SC144
2SD466
2sc5266
|
PDF
|
