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    2SC5376F Price and Stock

    Rochester Electronics LLC 2SC5376FV-A,L3F(B

    2SC5376FV - TRANSISTOR SILICON NPN EPIT - Tape and Reel (Alt: 2SC5376FV-A,L3F(B)
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    Avnet Americas 2SC5376FV-A,L3F(B Reel 4 Weeks 1
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    Toshiba America Electronic Components 2SC5376FV-A,L3F(B

    2SC5376FV - Transistor Silicon NPN Epitaxial Type
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC5376FV-A,L3F(B 8,000 1
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    2SC5376F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5376F Toshiba Original PDF
    2SC5376FV Toshiba Silicon NPN Epitaxial Transistor Original PDF
    2SC5376FV-A Toshiba 2SC5376 - TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC5376FV-B Toshiba 2SC5376 - TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SC5376F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) · High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    2SC5376FV

    Abstract: sat 1205
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •


    Original     		PDF 2SC5376FV 2SC5376FV sat 1205

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.4 1 2 3 Rating Unit Collector-base voltage


    Original     		PDF 2SC5376FV

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376F ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い: VCE sat (1) = 15 mV (標準) •


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV

    2SC5376FV

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV 2SC5376FV

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5376FV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC5376FV

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    88E8001

    Abstract: marvell 88e8001 q165A asus schematic diagram Asus ich6 sata connector IDE TO SATA SIL3811 marvell 88SA8040 INVERTER BOARD Asus A6 T393D
    Text: A B C D E W3V/A SCHEMATIC V2.1 PAGE 1 Content PAGE SYSTEM PAGE REF. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 2 3 4 5 Content 1 POWER PAGE REF. DOTHAN CPU-1 DOTHAN CPU-2


    Original     		PDF ICS954213) LPC48 C91D91N 88E8001 marvell 88e8001 q165A asus schematic diagram Asus ich6 sata connector IDE TO SATA SIL3811 marvell 88SA8040 INVERTER BOARD Asus A6 T393D

    PDTA144E

    Abstract: lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17
    Text: 1 A B C 2 3 4 5 6 7 8 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Title 0.2 050523 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 0.2 050523 27 MINI-PCI 03 Dothan(HOST BUS) 1/2 0.2 050523 28 LAN (82562ET)


    Original     		PDF 82562ET) CK-410M) KB3910 NV44M) 47ohm. 56ohm MS03-1-01 PDTA144E lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40