Untitled
Abstract: No abstract text available
Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) (1.0) (1.5) Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO
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2SB0788
2SB788)
2SD0958
2SD958)
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2SB788
Abstract: 2SB0788 2SD0958 2SD958
Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD0958
2SD958)
2SB0788
2SB788)
2SB788
2SB0788
2SD0958
2SD958
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2SB0788
Abstract: 2SB788 2SD0958 2SD958
Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Rating Unit
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2SD0958
2SD958)
2SB0788
2SB788)
2SB0788
2SB788
2SD0958
2SD958
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planar type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO.
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2SD0958
2SD958)
2SB0788
2SB788)
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2SB0788
Abstract: 2SB788 2SD0958 2SD958
Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage
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2SB0788
2SB788)
2SD0958
2SD958)
2SB0788
2SB788
2SD0958
2SD958
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2SB0788
Abstract: 2SB788 2SD0958 2SD958
Text: Transistor 2SD0958 2SD958 Silicon NPN epitaxial planer type For high breakdown voltage and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 6.9±0.1 1.0 0.85 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD0958
2SD958)
2SB0788
2SB788)
2SB0788
2SB788
2SD0958
2SD958
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2SB788
Abstract: 2SB0788 2SD0958 2SD958
Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current
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2SD0958
2SD958)
2SB0788
2SB788)
2SB788
2SB0788
2SD0958
2SD958
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2SB788
Abstract: 2SB0788 2SD0958 2SD958
Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol
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2SB0788
2SB788)
2SD0958
2SD958)
2SB788
2SB0788
2SD0958
2SD958
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2SB0788
Abstract: 2SB788 2SD0958 2SD958
Text: Transistors 2SD0958 2SD958 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • Features • High collector-emitter voltage (Base open) VCEO
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2SD0958
2SD958)
2SB0788
2SB788)
2SB0788
2SB788
2SD0958
2SD958
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter
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2SB0788
2SB788)
2SD0958
2SD958)
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2SB788
Abstract: 2SB0788 2SD0958 2SD958
Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB0788
2SB788)
2SD0958
2SD958)
2SB788
2SB0788
2SD0958
2SD958
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB0788 2SB788 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 (1.0) 4.1±0.2 2.4±0.2 1.0±0.1 (0.85) 0.55±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2SB0788
2SB788)
2SD0958
2SD958)
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2SB0788
Abstract: 2SB788 2SD0958 2SD958
Text: Transistor 2SB0788 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) 4.5±0.1 3.5±0.1 4.1±0.2 (0.85) Parameter Symbol
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2SB0788
2SB788)
2SD0958
2SD958)
2SB0788
2SB788
2SD0958
2SD958
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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