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    2SD1254 Search Results

    2SD1254 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1254 Kexin Silicon NPN epitaxial planar type Original PDF
    2SD1254 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD1254 Panasonic NPN Transistor Original PDF
    2SD1254 TY Semiconductor Silicon NPN epitaxial planar type - TO-252 Original PDF
    2SD1254 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1254 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1254 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1254 Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Scan PDF
    2SD1254 Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1254R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

    2SD1254 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1254

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		PDF 2SD1254 O-252 2SD1254

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4


    Original     		PDF 2002/95/EC) 2SB0931 2SB931) 2SD1254

    2SB0931

    Abstract: 2SD1254
    Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 130


    Original     		PDF 2SD1254 2SB0931 2SD1254

    2SB0931

    Abstract: 2SB931 2SD1254
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5


    Original     		PDF 2002/95/EC) 2SB0931 2SB931) 2SD1254 2SB0931 2SB931 2SD1254

    2SD1254

    Abstract: 2SB931
    Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Ta=25°C


    Original     		PDF 2SD1254 100mA 2SD1254 2SB931

    2SD1254

    Abstract: 2SB0931
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C Parameter


    Original     		PDF 2002/95/EC) 2SD1254 2SB0931 2SD1254 2SB0931

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max


    Original     		PDF 2SD1254 O-252

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol


    Original     		PDF 2002/95/EC) 2SB0931 2SB931) 2SD1254

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol


    Original     		PDF 2002/95/EC) 2SB0931 2SB931) 2SD1254

    2SB0931

    Abstract: 2SB931 2SD1254
    Text: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130


    Original     		PDF 2SB0931 2SB931) 2SD1254 2SB0931 2SB931 2SD1254

    2SB0931

    Abstract: 2SB931 2SD1254
    Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Ta=25°C


    Original     		PDF 2SD1254 2SB0931 2SB931 2SD1254

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SD1254 2SB0931

    Untitled

    Abstract: No abstract text available
    Text: 2SD1254P Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)130 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2


    Original     		PDF 2SD1254P Freq500mÃ

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SB931

    Abstract: 2SD1254
    Text: Power Transistors 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current IC –3


    Original     		PDF 2SB931 2SB931 2SD1254

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SB931

    Abstract: 2SD1254 2SB0931
    Text: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current


    Original     		PDF 2SB0931 2SB931) 2SB931 2SD1254 2SB0931

    2SB931

    Abstract: 2SD1254
    Text: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 • Features Unit I mm 8.7 ; • Low collector-emitter saturation voltage VcEisa« • Good linearity of DC current gain


    OCR Scan     		PDF 2SB931 2SD1254 2SB929/A) bR32fl5E 2SB931 2SD1254

    2SB931

    Abstract: 2SD1254
    Text: P o w e r T ra n s is to rs 2SD1254 2S D 1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • • • • Low collector-em itter saturation voltage V c e m Good linearity of DC current gain (I i f e )


    OCR Scan     		PDF 2SD1254 2SB931 2SD1252/A) 2SB931 2SD1254

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1254 2SD1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • Low collector-em itter saturation voltage • Good linearity of DC current gain V ce isa o (I i f e )


    OCR Scan     		PDF 2SD1254 2SB931 G01bb3b

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 •Features Unit I mm 3.7 max 8.7 max. t*-* 1.1 max. 6.5 max. • Low co llector-em itter saturation voltage VcEisa« - t


    OCR Scan     		PDF 2SB931 2SD1254

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


    OCR Scan     		PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642