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    2SD1257A Search Results

    2SD1257A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1257A Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD1257A Panasonic NPN Transistor Original PDF
    2SD1257A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1257A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1257A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1257A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1257A Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1257AP Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SD1257AQ Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

    2SD1257A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3004 IC

    Abstract: 2SD1257 2SD1257A
    Text: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm Collector-base voltage Emitter open Rating Unit VCBO 130 V 2SD1257A VCEO 14.4±0.5 3.0+0.4 –0.2 1 : Base 2 : Collector 3 : Emitter N-G1 Package 80 V Emitter-base voltage (Collector open)


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    PDF 2SD1257, 2SD1257A 3004 IC 2SD1257 2SD1257A

    2SD1257

    Abstract: 2SD1257A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1257 Collector-base voltage (Emitter open) Symbol Rating Unit VCBO 130 V 2SD1257A 150 Collector-emitter voltage 2SD1257


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    PDF 2002/95/EC) 2SD1257, 2SD1257A 2SD1257 2SD1257 2SD1257A

    2SB934

    Abstract: 2SD1257 2SD1257A tf 130
    Text: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB934 80 VCEO emitter voltage 2SD1257A 100 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C


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    PDF 2SD1257, 2SD1257A 2SB934 300ms 2SD1257 2SB934 2SD1257 2SD1257A tf 130

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm Collector-base voltage (Emitter open) Rating Unit VCBO 130 V 2SD1257A VCEO 14.4±0.5 3.0+0.4 –0.2 1 : Base 2 : Collector


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    PDF 2002/95/EC) 2SD1257, 2SD1257A 2SD1257

    2SB0934

    Abstract: 2SB934 2SD1257 2SD1257A
    Text: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0934 2SB934 V 100 Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation


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    PDF 2SD1257, 2SD1257A 2SB0934 2SB934) 2SB0934 2SB934 2SD1257 2SD1257A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm Collector-base voltage (Emitter open) Rating Unit VCBO 130 V 2SD1257A VCEO 14.4±0.5 3.0+0.4 –0.2 1 : Base 2 : Collector


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    PDF 2002/95/EC) 2SD1257, 2SD1257A 2SD1257

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2sc897 hitachi

    Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .


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    PDF 2SA648 2SA663 2SC793 2SD188 2N5347 2N5478 2N6316 2N6318 2N5872 2N5874 2sc897 hitachi nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SD1257

    Abstract: 2SD1257A
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15


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    PDF 2SD1257 2SD1257A O-252 2SD1257 2SD1257A

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1257,2SD1257A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Low collector-emitter saturation voltage VCE sat . Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127


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    PDF 2SD1257 2SD1257A O-252 2SD1257

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


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    PDF 2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201

    2SB934

    Abstract: 2SD1257 2SD1257A
    Text: Power Transistors 2SD1 257, 2SD1257A 2SD1257, 2S D 1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem entary Pair w ith 2SB934 ■ Features • L ow c o lle c t o r - e m itte r sa tu r a tio n v o lta g e V<_e (Sat>


    OCR Scan
    PDF 2SD1257A 2SD1257, 2SB934 2SD1257 GDlbb43 2SB934 2SD1257A

    2SD1257

    Abstract: 2SB934 2SD1257A
    Text: Power Transistors 2SD1257, 2SD1257A 2SD1257, 2SD1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem enta ry Pair w ith 2SB934 ■ Features • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e V<_E (SJt>


    OCR Scan
    PDF 2SD1257, 2SD1257A 2SB934 2SD1257 GGlbb43 2SB934 2SD1257A

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan
    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398